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ST Microelectronics
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| Part No. |
STP40NF10
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| OCR Text |
...s
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Vo...202 0.106 0.409
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C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA
1
7/1... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
411.78K /
11 Page |
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STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
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| Part No. |
STB185N55 STP185N55 B185N55 P185N55
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| OCR Text |
...acteristics
Table 5.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (...202 0.052 0.256 0.107 0.551 0.154
oP
Q
9/12
Packaging mechanical data
STB185N55 - STP18... |
| Description |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220 N沟道55V 2.9mohm - 120A D2PAK/TO-220
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| File Size |
205.49K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP40N20 STB40N20 STW40N20
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| OCR Text |
...ited by safe operating area (1) ISD 40A, di/dt 200 A/s, VDD V(BR)DSS, T j T JMAX.
Table 4: Thermal Data
TO-220/ Rthj-case Rthj-amb T...202 0.052 0.256 0.107 0.551 0.154
oP
Q
8/13
STB40N20 - STP40N20 - STW40N20
TO-247 MECHA... |
| Description |
N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STRIPFET MOSFET
From old datasheet system
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| File Size |
342.87K /
13 Page |
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意法半导
ST Microelectronics
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| Part No. |
STW5NK100Z STF5NK100Z STP5NK100Z
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| OCR Text |
...ited by safe operating area (1) ISD 3.5A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
Table 4...202 0.052 0.256 0.107 0.551 0.154
oP
Q
8/12
STP5NK100Z - STF5NK100Z - STW5NK100Z
TO-220... |
| Description |
N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
From old datasheet system
N-CHANNEL 1000V - 2.7 Ohm - 3.5A - TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH MOSFET
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| File Size |
321.52K /
12 Page |
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Microsemi Corporation
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| Part No. |
APT29F100B2 APT29F100L
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| OCR Text |
...1.1 270 640 V ns C A 25 V/ns
ISD = 16A, TJ = 25C, VGS = 0V
ISD = 16A 3 diSD/dt = 100A/s
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
IS...202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Re... |
| Description |
1000V, 29A, 0.46ヘ Max, trr ÷270ns N-Channel FREDFET
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| File Size |
387.65K /
4 Page |
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STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP12NK80Z STB12NK80ZT4 STB12NK80Z STW12NK80Z
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| OCR Text |
... STW12NK80Z
Table 7.
Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM
Source drain diode
Parameter Source-drain Current Source-drain Cur...202 0.052 0.256 0.107 0.551 0.154
oP
Q
10/15
STB12NK80Z - STP12NK80Z - STW12NK80Z
4 Pac... |
| Description |
N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET N沟道800V 0.65欧姆- 10.5A20 / D2PAK封装/47齐纳保护SuperMESH功率MOSFET
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| File Size |
318.56K /
15 Page |
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Price and Availability
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