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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSM121AR C67076-S1014-A2
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| OCR Text |
...arge VGS = f (Qgate) parameter: idpuls = 200 A
Semiconductor Group
37
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| Description |
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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| File Size |
206.44K /
7 Page |
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it Online |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
BSP320S Q67000-S4001 BSP320
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| OCR Text |
...n current, pulsed
TA = 25 C
idpuls
11.6
E AS
Avalanche energy, single pulse
ID = 2.9 A, V DD = 25 V, RGS = 25 L = 14.3 mH, Tj = 25 C
mJ
60
E AR IAR
Avalanche energy, periodic limited by Tj(max) Avalanche current, repe... |
| Description |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
SIPMOS ? Small-Signal Transistor
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| File Size |
128.76K /
8 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSP88 Q67000-S070
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| OCR Text |
... C
DC drain current, pulsed
idpuls
1.28
TA = 25 C
Power dissipation
Ptot
1.7
W
TA = 25 C
Semiconductor Group
1
Sep-12-1996
BSP 88
Maximum Ratings Parameter Chip or operating temperature Storage temperature ... |
| Description |
SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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| File Size |
171.88K /
9 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSP89 Q67000-S652
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| OCR Text |
... C
DC drain current, pulsed
idpuls
1.44
TA = 25 C
Power dissipation
Ptot
1.7
W
TA = 25 C
Semiconductor Group
1
Sep-12-1996
BSP 89
Maximum Ratings Parameter Chip or operating temperature Storage temperature ... |
| Description |
SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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| File Size |
171.35K /
9 Page |
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it Online |
Download Datasheet |
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SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
BSP92 Q62702-S653
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| OCR Text |
... C
DC drain current, pulsed
idpuls
-0.8
TA = 25 C
Power dissipation
Ptot
1.7
W
TA = 25 C
Semiconductor Group
1
18/02/1997
BSP 92
Maximum Ratings Parameter Chip or operating temperature Storage temperature T... |
| Description |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
SIPMOS ? Small-Signal Transistor
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| File Size |
96.02K /
8 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ77A C67078-S1320-A3
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| OCR Text |
... Symbol Values 2.7 Unit A
ID idpuls
11
TC = 31 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
2.7 5 mJ
ID = 2.7 ... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
SIPMOS ? Power Transistor
From old datasheet system
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| File Size |
175.19K /
9 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ77B C67078-S1320-A5 BUZ77BC67078-S1320-A5
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| OCR Text |
... Symbol Values 2.9 Unit A
ID idpuls
11.5
TC = 29 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
2.7 5 mJ
ID = 2.... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
DMOS driver for bipolar stepper motor
SIPMOS ? Power Transistor
From old datasheet system
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| File Size |
175.38K /
9 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPU08P05 SPD08P05
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| OCR Text |
...sed drain current
TC = 25 C
idpuls
-32
EAS
Avalanche energy, single pulse
ID = -8 A, VDD = -25 V, RGS = 25 L = 2.2 mH, Tj = 25 C
mJ
70
VGS Ptot
Gate source voltage Power dissipation
TC = 25 C
20
40
V W
Ope... |
| Description |
SIPMOS ? Power Transistor
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| File Size |
217.63K /
9 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
BSS123 Q67000-S245 Q62702-S512
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| OCR Text |
... C
DC drain current, pulsed
idpuls
0.68
TA = 25 C
Power dissipation
Ptot
0.36
W
TA = 25 C
Semiconductor Group
1
Sep-13-1996
BSS 123
Maximum Ratings Parameter Chip or operating temperature Storage temperatur... |
| Description |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) SIPMOS小信号晶体管（N通道增强模式的逻辑电平
SIPMOS ? Small-Signal Transistor
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| File Size |
131.96K /
8 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Part No. |
SPU23N05 SPD23N05 Q67040-S4131-A2 Q67040-S4138-A2
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| OCR Text |
...sed drain current
TC = 25 C
idpuls
88
EAS
Avalanche energy, single pulse
ID = 22 A, V DD = 25 V, RGS = 25 L = 372 H, Tj = 25 C
mJ
90
IAR EAR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjma... |
| Description |
SIPMOS Power Transistor
SIPMOS ? Power Transistor
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| File Size |
147.11K /
8 Page |
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it Online |
Download Datasheet |
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