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  id-1.6a Datasheet PDF File

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    VB029SP 6060 VB029 VB029_011Y VB029_012Y VB029011Y VB029012Y

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. VB029SP 6060 VB029 VB029_011Y VB029_012Y VB029011Y VB029012Y
OCR Text ...VB029(012Y) s Vcl Icl Id(on) 320V 12A 230mA PRIMARY COIL VOLTAGE INTERNALLY SET s COIL CURRENT LIMIT INTERNALLY SET s ...1 PowerSO-10TM PENTAWATT HV (012Y) ORDER CODES: PowerSO-10TM PENTAWATT HV PENTAWATT HV (011...
Description Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Voltage Nom.:600V RoHS Compliant: Yes
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Pink; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
From old datasheet system
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.

File Size 86.86K  /  10 Page

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    AON3814 AON381410

Alpha & Omega Semiconductors
Part No. AON3814 AON381410
OCR Text ...r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vd...
Description 20V N-Channel MOSFET

File Size 366.62K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT12N60
OCR Text ...in current v ds =600v, v gs =0v id=250 a, vgs=0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter...1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the j...
Description 600V,12A N-Channel MOSFET

File Size 469.53K  /  6 Page

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    AOW12N60 AOWF12N60

Alpha & Omega Semiconductors
Part No. AOW12N60 AOWF12N60
OCR Text ...in current v ds =600v, v gs =0v id=250a, vgs=0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter c...1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the jun...
Description 600V,12A N-Channel MOSFET

File Size 259.96K  /  6 Page

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    Fuji Semiconductors
Part No. K3518
OCR Text ...6810 0 1 2 3 4 rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 6.0v 6.5v 7.0v vgs=5.5v 0.01 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance characteristics 2sk3518-01mr fuji power mosfet id=f(vgs):80...
Description Search --To 2SK3518

File Size 144.68K  /  4 Page

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    IRFRU6215 IRFU6215 IRFR6215

IRF[International Rectifier]
Part No. IRFRU6215 IRFU6215 IRFR6215
OCR Text ...= -150V RDS(on) = 0.295 G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...1.5 watts are possible in typical surface mount applications. D -P A K T O -252 A A I-P A K T O -25...
Description HEXFET? Power MOSFET
Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

File Size 137.32K  /  10 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 FSS913A0R3 FSS913AOD
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may...
Description 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

File Size 55.89K  /  8 Page

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    Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FL12KM-7A
OCR Text .............................. 0.4 ID ............................................................................................ 7A Viso .......1.90 10 1050 150 25 20 30 160 60 1.5 -- Max. -- -- 10 1.0 4.0 0.40 2.40 -- -- -- -- -- -- -- -- 2.0 ...
Description HIGH-SPEED SWITCHING USE Nch POWER MOSFET

File Size 48.73K  /  4 Page

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    STMicroelectronics N.V.
Part No. VNN7NV0413TR
OCR Text ...ansconductance 0 2 4 6 8 101214 id(a) 500 550 600 650 700 750 800 850 900 950 1000 vsd (mv) vin=0v 0 0.25 0.5 0.75 1 1.25 id(a) 0 50 100 150 200 250 300 350 400 450 500 rds(on) (mohm) tj=25oc tj=150oc tj= - 40oc vin=2.5v 33.544.555.566.5 7 ...
Description “OMNIFET II FULLY AUTOPROTECTED POWER MOSFET “OMNIFET二”:充分AUTOPROTECTED功率MOSFET

File Size 492.24K  /  29 Page

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    VN0606 VN0606L

SUTEX[Supertex, Inc]
Part No. VN0606 VN0606L
OCR Text ID(ON) (min) 1.5A Order Number / Package TO-92 VN0606L Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain dio...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 428.74K  /  2 Page

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