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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT12N60
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| OCR Text |
...in current v ds =600v, v gs =0v id=250 a, vgs=0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter...1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the j... |
| Description |
600V,12A N-Channel MOSFET
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| File Size |
469.53K /
6 Page |
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Fuji Semiconductors
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| Part No. |
K3518
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| OCR Text |
...6810 0 1 2 3 4 rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 6.0v 6.5v 7.0v vgs=5.5v 0.01 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance characteristics 2sk3518-01mr fuji power mosfet id=f(vgs):80... |
| Description |
Search --To 2SK3518
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| File Size |
144.68K /
4 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 FSS913A0R3 FSS913AOD
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| OCR Text |
.... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may... |
| Description |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
55.89K /
8 Page |
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FL12KM-7A
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| OCR Text |
.............................. 0.4 ID ............................................................................................ 7A Viso .......1.90 10 1050 150 25 20 30 160 60 1.5 -- Max. -- -- 10 1.0 4.0 0.40 2.40 -- -- -- -- -- -- -- -- 2.0 ... |
| Description |
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
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| File Size |
48.73K /
4 Page |
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STMicroelectronics N.V.
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| Part No. |
VNN7NV0413TR
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| OCR Text |
...ansconductance 0 2 4 6 8 101214 id(a) 500 550 600 650 700 750 800 850 900 950 1000 vsd (mv) vin=0v 0 0.25 0.5 0.75 1 1.25 id(a) 0 50 100 150 200 250 300 350 400 450 500 rds(on) (mohm) tj=25oc tj=150oc tj= - 40oc vin=2.5v 33.544.555.566.5 7 ... |
| Description |
“OMNIFET II FULLY AUTOPROTECTED POWER MOSFET “OMNIFET二”:充分AUTOPROTECTED功率MOSFET
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| File Size |
492.24K /
29 Page |
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it Online |
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Price and Availability
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