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				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	... TL = 90C IDM PD Symbol VDS VGS ID IRF7811AV 30 20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V www.irf.com 1 12/13/00 IRF7811AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Sour...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	... TL = 90C IDM PD Symbol VDS VGS ID 14.5 14.2 100 2.5 2.4 -55 to 150 2.5 50 C A IRF7809A 30 12 11.4 11.2 100 W A IRF7811A 28 Units V www.irf.com 1 01/19/00 IRF7809A/IRF7811A Electrical Characteristics Parameter Drain-to-Source Br...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...S 500V RDS(on) max 0.85 ID 8.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effect...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...S 500V Rds(on) max 0.85 ID 8.0A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pul...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...S = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new series of low charge HEXFET(R) power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	...T FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 ...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	... P-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	.... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . ....
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...F9230 BVDSS -200V RDS(on) 0.80 ID -6.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achiev...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

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