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  finite Datasheet PDF File

For finite Found Datasheets File :: 1878    Search Time::1.313ms    
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    Microchip
Part No. MCP2515
OCR Text ... protocol rec tec errpas busoff finite state machine counter counter shift<14:0> {transmit<5:0>, receive<8:0>} transmit logic bit timing logic tx rx configuration registers clock generator protocol engine buffers txreq txb1 abtf mloa txerr ...
Description The MCP2515 is a second generation stand-alone CAN controller. It is pin and function compatible with the MCP2510 and also includes ...

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    MTDF2N06HD-D

ON Semiconductor
Part No. MTDF2N06HD-D
OCR Text ...tics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching...
Description Power MOSFET 2 Amps, 60 Volts N-Channel Micro8 Dual

File Size 110.58K  /  12 Page

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    MAXIM - Dallas Semiconductor
Part No. AN1943
OCR Text ...erator to reduce the effects of finite switching time on the insertion of graphics onto a video signal. this application note describes a circuit modification to the ma x4455 ev board that will improve the performance of the max4455/m...
Description Improving the Performance of the MAX4455 by Reducing On-Screen Display Artifacts

File Size 190.52K  /  4 Page

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    LC78835 LC78835K LC78835KM

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LC78835 LC78835K LC78835KM
OCR Text ...fs oversampling filter: 3-stage finite-impulseresponse (FIR) filter design (43rd-, 11th-, and thirdorders) -- De-emphasis filter: Supports fs = 32 kHz, 44.1 kHz, or 48 kHz -- Soft mute -- Noise shaper -- Supports double-rate sampling * D/A ...
Description 18 Bits Digital Filter and D/A Converter for Digital Audio

File Size 397.35K  /  14 Page

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    MMDF5N02Z-D

ON Semiconductor
Part No. MMDF5N02Z-D
OCR Text ...tics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to mea- sure and, consequently, is not specified. the resistive swit...
Description Power MOSFET 5 Amps, 20 Volts N-Channel SO-8, Dual

File Size 111.01K  /  12 Page

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    MTD20N06HD-D

ON Semiconductor
Part No. MTD20N06HD-D
OCR Text ...tics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching...
Description Power MOSFET 20 Amps, 60 Volts N-Channel DPAK

File Size 116.18K  /  12 Page

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    FEDSM2000-11043

List of Unclassifed Manufacturers
N.A.
ETC
Electronic Theatre Controls, Inc.
Part No. FEDSM2000-11043
OCR Text ... The excited state exists for a finite time (typically 1-10 x 10-9 seconds). During this time, the fluorophore undergoes conformational changes and is also subject to a multitude of possible interactions with its molecular environment. Thes...
Description DUAL EMISSION LASER INDUCED FLUORESCENCE TECHNIQUE (DELIF) FOR OIL FILM THICKNESS AND TEMPERATURE MEASUREMENT

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    MMSF10N02Z-D

ON Semiconductor
Part No. MMSF10N02Z-D
OCR Text ...tics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching...
Description Power MOSFET 10 Amps, 20 Volts N-Channel SO-8

File Size 111.12K  /  12 Page

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    MTD20N06HD MTD20N06HD_D ON2484

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTD20N06HD MTD20N06HD_D ON2484
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description From old datasheet system
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

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    MTD20N06HDL ON2483

Motorola Mobility Holdings, Inc.
Motorola, Inc
Part No. MTD20N06HDL ON2483
OCR Text ...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system

File Size 292.90K  /  12 Page

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