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K4N56 22832 M66273FP 2SC5588 TZMC6V8 2599M 1620FI EMB10T2R
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  field-feefct Datasheet PDF File

For field-feefct Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    2SK3543

Toshiba Semiconductor
Part No. 2SK3543
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

File Size 222.05K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TPCS8201
Description Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )

File Size 302.11K  /  7 Page

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    2SJ567

Toshiba Semiconductor
Part No. 2SJ567
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications

File Size 231.29K  /  6 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    MTD3055VL MTD3055VLNL

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. MTD3055VL MTD3055VLNL
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 174.41K  /  3 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5412222B-XXTS-K MSM5412222B-30TS-K MSM5412222B-25TS-K MSM5412222B-25JS
Description 262,214-Word 12-Bit Field Memory 262214词2位场记忆
262,214-Word 12-Bit Field Memory 262214词12位场记忆

File Size 132.39K  /  17 Page

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    PTF10137

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10137
Description 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor

File Size 174.57K  /  6 Page

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    General Electric Solid State
GESS[GE Solid State]
Part No. 3N206 3N204 3N205
Description Silicon dual insulated-gate field-effect transistor.
Silicon Dual Insulated-Gate Field-Effect Transistors

File Size 359.86K  /  8 Page

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    PTF10031

Ericsson Microelectronics
Part No. PTF10031
Description 50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦,1.0 GHzGOLDMOS场效应晶体管

File Size 214.70K  /  6 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM54V12222B-20TS-K MSM54V12222B-25JS
Description 262,214-Word 12-Bit Field Memory 262214词12位场记忆
262,214-Word 12-Bit Field Memory 262214词2位场记忆

File Size 132.61K  /  17 Page

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