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  fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 178    Search Time::1.25ms    
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    EFC4601R ENA1262

Sanyo Semicon Device
Part No. EFC4601R ENA1262
OCR Text ...sely if you want to measure the FET2 side. No. A1262-3/6 EFC4601R Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...10.0 V 4.0 Source Current, IS -- A 4.5 2.5 V 5.5 V 6 5 4 3 VSS=1.5V ...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 122.28K  /  6 Page

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    EFC4601 ENA0537

Sanyo Semicon Device
Part No. EFC4601 ENA0537
OCR Text ...sely if you want to measure the FET2 side. No. A0537-3/6 EFC4601 Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...10. 3 4.0 V VSS=1.5V 2 Ta= 75C 1.5 1.0 0.5 1 0 0 0.05 0.10 0.15 0.20 0.25 0...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 71.25K  /  6 Page

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    EFC4602 ENA1048

Sanyo Semicon Device
Part No. EFC4602 ENA1048
OCR Text ...sely if you want to measure the FET2 side. No. A1048-3/6 EFC4602 Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...10 0 0 2 4 6 8 10 IT13277 40 30 20 2.5V S= 1V 1. =3. I S= VGS , 1.5A I S= V V =4.0 =4.5 ...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 69.85K  /  6 Page

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    EFC4606

Sanyo Semicon Device
Part No. EFC4606
OCR Text ...sely if you want to measure the FET2 side. No. A1177-3/6 EFC4606 Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...10 9 8 6.0 IS -- VSS 10.0V 4.5 V IS -- VGS VSS=10V 5.5 5.0 Source Current, IS -- A ...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 120.77K  /  6 Page

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    UPA1853 UPA1853GR-9JG PA1853 D12968EJ1V0DS00

NEC[NEC]
Part No. UPA1853 UPA1853GR-9JG PA1853 D12968EJ1V0DS00
OCR Text ...0mm x 1.1mm -0.01 PD(FET1) : PD(FET2) = 1:1 -0.1 30 60 90 120 TA - Ambient Temperature - C 150 -0.1 -1.0 -10.0 -100.0 VDS - Drain to Source Voltage - V -10 -8 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VG...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 65.56K  /  8 Page

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    UPA1852 UPA1852GR-9JG PA1852 D12803EJ1V0DS00

NEC[NEC]
Part No. UPA1852 UPA1852GR-9JG PA1852 D12803EJ1V0DS00
OCR Text ...50cm x 1.1mm 0.01 PD(FET1) : PD(FET2) = 1:1 0.1 30 60 90 120 TA - Ambient Temperature - C 150 0.1 1.0 10.0 100.0 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V 4.0 V 2.5...
Description From old datasheet system
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 62.59K  /  8 Page

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    UPA1851 UPA1851GR-9JG PA1851 D12733EJ2V0DS00

NEC Corp.
NEC[NEC]
Part No. UPA1851 UPA1851GR-9JG PA1851 D12733EJ2V0DS00
OCR Text ...of 50 cm x 1.1 mm PD(FET1) : PD(FET2) = 1:1 -1 -10 -100 TA - Ambient Temperature - C VDS - Drain to Source Voltage - V -12 -10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = -10 V TRANSFER CHARACTERISTICS -100 -10 ...
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
From old datasheet system

File Size 63.43K  /  8 Page

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    UPA1850 UPA1850GR-9JG D11818EJ2V0DS00

NEC, Corp.
NEC[NEC]
Part No. UPA1850 UPA1850GR-9JG D11818EJ2V0DS00
OCR Text ... mm x 1.1mm -0.01 PD(FET1) : PD(FET2) = 1:1 -0.1 30 60 90 120 TA - Ambient Temperature - C 150 -0.1 -1.0 -10.0 -100.0 VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V TRANSFER CHA...
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
From old datasheet system

File Size 63.24K  /  8 Page

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    FW111

Sanyo Semicon Device
Part No. FW111
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) -W P D - Ta M nte do na Al...
Description P-Channel Silicon MOSFET Load S/W Applications

File Size 44.46K  /  4 Page

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    FW248

Sanyo Semicon Device
Part No. FW248
OCR Text ...0.4 0.2 0 0 PD (FET1) -- PD (FET2) Mounted on a ceramic board (1500mm20.8mm), PW10s Allowable Power Dissipation, PD -- W 2.2 2.0 1.8 1.5 To t 1u al Di ss ip 1.0 nit ati on 0.5 0 0 20 40 6...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 46.69K  /  4 Page

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For fet2-10 Found Datasheets File :: 178    Search Time::1.25ms    
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