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  f.r.d. Datasheet PDF File

For f.r.d. Found Datasheets File :: 1105    Search Time::1.235ms    
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    FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 7MBR75GE060
OCR Text ...ter Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current Item Bra...
Description    IGBT(600V/75A/PIM)

File Size 642.38K  /  9 Page

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    RJH60M3DPQ-A0

Renesas Electronics Corporation
Part No. RJH60M3DPQ-A0
OCR Text ... cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.3 1.7 v i f = 17 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 17 a dif/dt = 100 a/ ? s notes: 3. pulse test. rjh60m3dpq-a0 preliminary r07ds0534ej010...
Description 600 V - 17 A - IGBT Application: Inverter

File Size 47.90K  /  4 Page

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    Matsshita / Panasonic
Part No. MA3D649
OCR Text FRD) MA3D649 (MA6D49) Silicon planar type (cathode common) Unit : mm For high-frequency rectification 15.0 0.5 9.9 0.3 4.6 0.2 I Features * Low forward rise voltage VF * Fast reverse recovery time trr * TO-220D (Full-p...
Description Fast Recovery Diodes (FRD)

File Size 67.74K  /  3 Page

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    panasonic
Part No. MA3D649
OCR Text FRD) MA3D649 (MA6D49) Silicon planar type (cathode common) Unit : mm For high-frequency rectification I Features * Low forward rise voltage VF * Fast reverse recovery time trr * TO-220D (Full-pack package) with high dielectric brea...
Description TO-220D-A1
From old datasheet system

File Size 64.47K  /  3 Page

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    MA3D649 MA6D49

PANASONIC[Panasonic Semiconductor]
Part No. MA3D649 MA6D49
OCR Text FRD) MA3D649 Silicon planar type (cathode common) Unit : mm For high-frequency rectification 15.0 0.5 9.9 0.3 4.6 0.2 I Features * Low forward rise voltage VF * Fast reverse recovery time trr * TO-220D (Full-pack packa...
Description Silicon planar type (cathode common)

File Size 44.72K  /  2 Page

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    RJH60M0DPQ-A0

Renesas Electronics Corporation
Part No. RJH60M0DPQ-A0
OCR Text ...cc ? 360 v , v ge = 15 v frd forward voltage v f ? 1.4 1.9 v i f = 22 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 22 a di f /dt = 100 a/ ? s notes: 3. pulse test rjh60m0dpq-a0 preliminary r07ds0535ej01...
Description 600 V - 22 A - IGBT Application: Inverter

File Size 47.94K  /  4 Page

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    RJH60M6DPQ-A0

Renesas Electronics Corporation
Part No. RJH60M6DPQ-A0
OCR Text ...v cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.3 1.8 v i f = 40 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 40 a di f /dt = 100 a/ ? s notes: 3. pulse test. rjh60m6dpq-a0 preliminary r07ds0537ej0...
Description 600 V - 40 A - IGBT Application: Inverter

File Size 47.95K  /  4 Page

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    GT15J321

TOSHIBA[Toshiba Semiconductor]
Part No. GT15J321
OCR Text ...tage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector. Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power di...
Description High Power Switching Applications Fast Switching Applications

File Size 309.89K  /  7 Page

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    RJH60M7DPQ-A0

Renesas Electronics Corporation
Part No. RJH60M7DPQ-A0
OCR Text ... cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.4 2.0 v i f = 50 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 50 a dif/dt = 100 a/ ? s notes: 3. pulse test rjh60m7dpq-a0 preliminary r07ds0538ej0100...
Description 600 V - 50 A - IGBT Application: Inverter

File Size 47.93K  /  4 Page

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    panasonic
Part No. MA2D601
OCR Text FRD) MA2D601 Silicon planar type Unit : mm 15.00.5 For high-frequency rectification For Snubber circuit of power supplies For secondary side rectification for a power supply I Features * High reverse voltage VR > 600 V * Short r...
Description Power Device - Diodes - Fast Recovery Diodes(FRD)
From old datasheet system
TO-220D-A1

File Size 54.40K  /  3 Page

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