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FN4013 MUR3060 GMBTH10 2SD1992A R5031210 F1D38 D2580 2575HV
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    TY Semiconductor Co., Ltd
Part No. CES2307
Description High dense cell design for extremely low RDS(ON)

File Size 275.09K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2313
Description High dense cell design for extremely low RDS(ON).

File Size 223.01K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. FDC608PZ
Description High performance trench technology for extremely low RDS

File Size 179.71K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2321
Description High dense cell design for extremely low RDS(ON).

File Size 216.48K  /  2 Page

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    PESD5V0X1BCAL

NXP Semiconductors
Part No. PESD5V0X1BCAL
Description Extremely low capacitance bidirectional ESD protection diode

File Size 424.32K  /  12 Page

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    PMGD290XN

NXP Semiconductors
Part No. PMGD290XN
Description Dual N-channel mTrenchMOS extremely low level FET

File Size 116.60K  /  12 Page

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    SER2915H-332KL SER2915H-472KL SER2915H-222KL SER2915H-682KL SER2918H-332KL

Coilcraft lnc.
Part No. SER2915H-332KL SER2915H-472KL SER2915H-222KL SER2915H-682KL SER2918H-332KL
Description Extremely low DCR; Current handling to >100 Amps

File Size 404.40K  /  4 Page

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    PMGD370XN

NXP Semiconductors
Part No. PMGD370XN
Description Dual N-channel mTrenchMOS extremely low level FET

File Size 80.35K  /  12 Page

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    TY Semiconductor Co., Ltd
Part No. FDN8601
Description High performance trench technology for extremely low rDS(on)

File Size 91.84K  /  2 Page

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    IPW65R190C6 IPA65R190C6 IPP65R190C6

Infineon Technologies AG
Part No. IPW65R190C6 IPA65R190C6 IPP65R190C6
Description 650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss

File Size 2,189.49K  /  19 Page

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