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SQ0565 LA3235W SMDJ24CA PHB8N50E 00V12 AN5415 13689E DUY07C
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  epitaxy Datasheet PDF File

For epitaxy Found Datasheets File :: 119    Search Time::1.094ms    
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    AGILENT TECHNOLOGIES INC
Part No. HSCH-9201TC494
OCR Text ...cated utilizing molecular beam epitaxy (mbe) manufactur- ing techniques and feature rug- ged construction and consistent electrical performance. a polyim- ide coating provides scratch pro- tection and resistance to contamination. agilent...
Description GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE

File Size 42.47K  /  4 Page

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    Q62702P5053

OSRAM GmbH
Part No. Q62702P5053
OCR Text ...  fabricated in a liquid phase epitaxy process  cathode is electrically connected to the case  high reliability  matches all si-photodetectors  hermetically sealed package applications  photointerrupters  ir remote control  ...
Description GaAlAs-Lumineszenzdiode (660 nm)

File Size 139.31K  /  7 Page

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    Q62702P5302 Q62702P5303 SFH4881

OSRAM GmbH
Part No. Q62702P5302 Q62702P5303 SFH4881
OCR Text ...  fabricated in a liquid phase epitaxy process  anode is electrically connected to the case  high reliability  matches all si-photodetectors  hermetically sealed package applications  photointerrupters  ir remote control  sens...
Description IR-Lumineszenzdiode (880 nm) im TO-46-Geh?use

File Size 151.22K  /  6 Page

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    Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SFH485-2 Q62703-Q1755 Q62703-Q1756 SFH484 SFH484-1 SFH484-2 SFH485

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
Part No. Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SFH485-2 Q62703-Q1755 Q62703-Q1756 SFH484 SFH484-1 SFH484-2 SFH485
OCR Text ... Fabricated in a liquid phase epitaxy process High reliability Spectral match with silicon photodetectors SFH 484: Same package as LD 274 SFH 485: Same package as SFH 300, SFH 203 SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- un...
Description From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米

File Size 47.77K  /  5 Page

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    Shaanxi Qunli
Part No. 3DG102 3DG100
OCR Text ... 235 features: 1. using epitaxy planar technology structure. high working frequency. metallic packaging. 2. small volume, light weight, easy installation. 3. use for high frequency oscillation, high frequency small signal amp...
Description NPN Silicon High Frequency Low Power Transistor

File Size 30.81K  /  1 Page

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Part No. DUT1505-AG
OCR Text ...t uses a patented liquid phase epitaxy (lpe) construction to provide temperature performance above current silicon, silicon carbide and gallium nitride products of a similar specification. the device is able to function stably well a...
Description 15 A, 500 V, GALLIUM ARSENIDE, RECTIFIER DIODE

File Size 488.90K  /  6 Page

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    WPC

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. WPC
OCR Text ...ker noise npn cross section epitaxy (n-) bn substrate (p-) dc collector locos bp is locos base emitter is bp minimum geometry npn ft curve 0.0 2.0 4.0 6.0 8.0 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 ic (a) ft (ghz) vce=2v npn parameters ...
Description Bipolar Process

File Size 44.83K  /  1 Page

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    KV1501

Microsemi Corporation
Part No. KV1501
OCR Text ... ? precision grown junction epitaxy ? available with 5% tolerance c t ? rohs compliant 1 important: for the most current data, consult our website : www.microsemi.com specifications are subject to change. consul...
Description (KV1401 -KV1801) VARACTOR DIODES

File Size 150.94K  /  3 Page

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For epitaxy Found Datasheets File :: 119    Search Time::1.094ms    
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