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AGILENT TECHNOLOGIES INC
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| Part No. |
HSCH-9201TC494
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| OCR Text |
...cated utilizing molecular beam epitaxy (mbe) manufactur- ing techniques and feature rug- ged construction and consistent electrical performance. a polyim- ide coating provides scratch pro- tection and resistance to contamination. agilent... |
| Description |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
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| File Size |
42.47K /
4 Page |
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it Online |
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Shaanxi Qunli
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| Part No. |
3DG102 3DG100
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| OCR Text |
... 235 features: 1. using epitaxy planar technology structure. high working frequency. metallic packaging. 2. small volume, light weight, easy installation. 3. use for high frequency oscillation, high frequency small signal amp... |
| Description |
NPN Silicon High Frequency Low Power Transistor
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| File Size |
30.81K /
1 Page |
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it Online |
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| Part No. |
DUT1505-AG
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| OCR Text |
...t uses a patented liquid phase epitaxy (lpe) construction to provide temperature performance above current silicon, silicon carbide and gallium nitride products of a similar specification. the device is able to function stably well a... |
| Description |
15 A, 500 V, GALLIUM ARSENIDE, RECTIFIER DIODE
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| File Size |
488.90K /
6 Page |
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it Online |
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Price and Availability
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