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  E64 Datasheet PDF File

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E660812E-TC_L K4E640812E K4E640812E-JC_L K4E640812E-TC_L K4E660812E K4E660812E-JC_L K4E640812E-JC/L K4E660812E-JC/L K4E640812E-TC/L K4E660812E-TC/L
Description 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 189.50K  /  21 Page

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HUA FENG CIRCUIT





    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 414.70K  /  21 Page

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    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4E661611D-TC60
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50

File Size 889.14K  /  36 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4E661611D-TC60 K4E641611D-TC50 K4E641611D-TC60 K4E661611D K4E661611D-TC50
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out

File Size 881.22K  /  36 Page

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    BC858AE6327 BC858AE6433

Infineon Technologies AG
Part No. BC858AE6327 BC858AE6433
Description 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 215.87K  /  8 Page

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Part No. K4E660411D-JC50 K4E640411D-JC60
Description 16M X 4 EDO DRAM, 50 ns, PDSO32
16M X 4 EDO DRAM, 60 ns, PDSO32

File Size 411.30K  /  21 Page

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    BAS79BE6327 BAS79BE6433

INFINEON TECHNOLOGIES AG
Part No. BAS79BE6327 BAS79BE6433
Description 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 61.34K  /  3 Page

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Part: E648
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