diode-100v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 2SD882PT 183GP 11RM0001 50SQ080G TB62709F 18646357 ILX551A HD66731
	Product Description
	Full Text Search

diode-100v Datasheet PDF File

For diode-100v Found Datasheets File :: 11432 Search Time::3.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5014B2VR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 TJ =+150C 10 5 TJ =+25C 12 VDS=400V 8 1 0.5 4 100 200 300 400 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
File Size	61.78K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 TJ =+150C 10 5 TJ =+25C 12 VDS=400V 8 1 0.5 4 100 200 300 400 ...
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5015 APT5015BVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 50 100 150 200 250...
Description	POWER MOS V 500V 32A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.16K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVFR
OCR Text	...layout. * Fast Recovery Body Diode * Lower Leakage * Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR...100V VDS=250V 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 50 100 150 200 250...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.45K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 50 100 150 200 250...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.07K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017 APT5017SVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 50 100 150 200 250...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5019HVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 12 VDS=400V 8 16 100 50 TJ =+150C TJ =+25C 10 5 4 50 100 150 200 250 30...
Description	POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BN APT5022BN
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions / Part Numbe...100V VDS=250V 16 12 VDS=400V 8 4 2 1 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) ...
Description	POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.03K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVFR
OCR Text	...layout. * Fast Recovery Body Diode * Lower Leakage * Faster Switching * 100% Avalanche Tested FREDFET D G S * Popular TO-247 Pa...100V VDS=250V 12 VDS=400V 8 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIG...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 12 VDS=400V 8 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIG...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.88K / 4 Page	View it Online	Download Datasheet

For diode-100v Found Datasheets File :: 11432 Search Time::3.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |