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  di-760 Datasheet PDF File

For di-760 Found Datasheets File :: 664    Search Time::1.906ms    
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    IRF540N IRF540NPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF540N IRF540NPBF
OCR Text ... = 25C, IF = 16A --- 505 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 16A, di/dt 340A/s, VDD V...
Description Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 44mohm,身份证\u003d 33A条)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 97.90K  /  8 Page

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    M.S. Kennedy Corp.
Part No. MSK3018
OCR Text ... v gs =0v (q1,q3,q5) i s =30a di/dt=100a/s (q2,q4,q6) i s =-10a di/dt=100a/s (q1,q3,q5) i s =30a di/dt=100a/s (q2,q4,q6) i s =-10a d...760 160 electrical specifications 2 1 3 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 notes: this pa...
Description THREE PHASE BRIDGE MOSFET POWER MODULE

File Size 325.50K  /  5 Page

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    M.S. Kennedy Corp.
Part No. MSK3014
OCR Text ...a v gs =0v (q1,q4) i s =9.0a di/dt=100a/s (q2,q3) i s =-8.4a di/dt=100a/s (q1,q4) i s =9.0a di/dt=100a/s (q2,q3) i s =-8.4a di/dt=1...760 260 170 1.3 -1.6 130 130 650 650 max. - 25 -25 100 4.0 4.0 0.20 0.28 0.11 0.20 - - 44 6.2 21 - -...
Description H-BRIDGE MOSFET POWER MODULE

File Size 326.68K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. IRFU5410 IRFR5410
OCR Text ... recovery charge ??? 650 970 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ...760 ??? v gs = 0v c oss output capacitance ??? 260 ??? pf v ds = -25v c rss reverse transfer cap...
Description HEXFET? Power MOSFET

File Size 397.45K  /  10 Page

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    KK4502BN KK4502BD

KODENSHI KOREA CORP.
Part No. KK4502BN KK4502BD
OCR Text ...kage+ 750 500 mw p d power di ssi pat i on per out put transi st or 100 m w tst g st orage tem p erat ure -65 t o +150 c t ...760 360 260 ns t phz m a xi m u m propagat i on del a y , out put enabl e t o out put y (...
Description Strobed Hex Inverter/Buffer High-Voltage Silicon-Gate CMOS

File Size 233.42K  /  6 Page

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    D471N

eupec GmbH
Part No. D471N
OCR Text ...22f, r = 83 ? i fm = 1000a, -di t /dt = 10 a/s q r max. 6 mas rckstromspitze peak reverse recovery current v r = 1000v, t vj = t vj max c = 0,22f, r = 83 ? i fm = 1000a, -di t /dt = 10 a/s i rm max. 200 a sperrver...
Description Netz-Gleichrichterdiode Rectifier Diode

File Size 260.77K  /  8 Page

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    IRFR5410PBF IRFU5410PBF

IRF[International Rectifier]
Part No. IRFR5410PBF IRFU5410PBF
OCR Text ...J = 25C, IF = -8.4A 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 6.4mH R...
Description    HEXFET Power MOSFET

File Size 261.62K  /  10 Page

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    SDT200GK08 SDT200 SDT200GK12 SDT200GK14 SDT200GK16 SDT200GK18 STD200 STD200GK08 STD200GK12 STD200GK14 STD200GK16 STD200G

List of Unclassifed Manufacturers
ETC
Sirectifier Semiconductors
Part No. SDT200GK08 SDT200 SDT200GK12 SDT200GK14 SDT200GK16 SDT200GK18 STD200 STD200GK08 STD200GK12 STD200GK14 STD200GK16 STD200GK18
OCR Text ...s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=1A diG/dt=1A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ ...760 275 0.140 0.070 0.180 0.090 12.7 9.6 50 FEATURES * International standard package * Direct c...
Description Thyristor-Diode Modules, Diode-Thyristor Modules

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    ST303S ST303S04PFK1 ST303S04PFN1 ST303S12PFN1 ST303S04PFK0 ST303S04PFN0 ST303S08PFK0 ST303S08PFK1 ST303S08PFN0 ST303S08P

International Rectifier, Corp.
Part No. ST303S ST303S04PFK1 ST303S04PFN1 ST303S12PFN1 ST303S04PFK0 ST303S04PFN0 ST303S08PFK0 ST303S08PFK1 ST303S08PFN0 ST303S08PFN1 ST303S10PFK0 ST303S10PFK1 ST303S10PFN0 ST303S10PFN1 ST303S12PFK0 ST303S12PFK1 ST303S12PFN0 ST303S04PFL0 ST303S12PFJ0 ST303S08PFL0 ST303S10PFJ0
OCR Text ...-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 670 480 230 35 50 V DRM 50 40 ITM 180 el 470 330 140 50 50 65 1050 1021 760 150 50 V DRM 40 o ITM 100s 940 710 470 50 65 5240 1800 730 90 50 V DR...
Description INVERTER GRADE THYRISTORS Stud Version 晶闸管逆变器级螺栓版本
From old datasheet system
400V 471A Inverter Thyristor in a TO-209AE (TO-118) package
1000V 471A Inverter Thyristor in a TO-209AE (TO-118) package
1200V 471A Inverter Thyristor in a TO-209AE (TO-118) package
800V 471A Inverter Thyristor in a TO-209AE (TO-118) package

File Size 256.38K  /  9 Page

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    IRFR3411 IRFR3411PBF IRFU3411PBF

IRF[International Rectifier]
Part No. IRFR3411 IRFR3411PBF IRFU3411PBF
OCR Text ... = 25C, IF = 16A --- 505 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L =1.5mH RG = 2...
Description HEXFET Power MOSFET

File Size 223.72K  /  10 Page

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