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  d-5200 Datasheet PDF File

For d-5200 Found Datasheets File :: 698    Search Time::2.078ms    
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    IRF[International Rectifier]
Part No. 201CNQ045 201CNQ 201CNQ035 201CNQ040
OCR Text ...oltage (Per Leg) 1 (C/W) D = 0.50 0.1 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 Single Pulse (Thermal Resistance) PM D Thermal Impedance Z thJC t 1 t2 Notes: 1. Duty factor D = t1 / t 2 J D M hJCC 2. Peak Tj = Pdm x tZt...
Description    SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package

File Size 133.91K  /  5 Page

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    IRF[International Rectifier]
Part No. 224CNQ045 224CNQ 224CNQ035 224CNQ040
OCR Text ...e Voltage (Per Leg) (C/W) D=0 0 .5 .1 D=0 3 .3 D=0 5 .2 D=0 7 .1 D=0 8 .0 .0 1 S g P ls in le u e (T e a R s ta c ) h rm l e is n e .0 1 0 .0 0 1 00 .0 0 01 .0 1 0 .0 1 .1 PM D Thermal Impedance Z thJC t 1 t2 N te : os 1 D t...
Description    SCHOTTKY RECTIFIER
35V 220A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
Proximity Sensor; Sensor Input Type:Magnetic; Sensor Output Type:NPN; Leaded Process Compatible:No; Output Type:3 Wire; Peak Reflow Compatible (260 C):No; Sensor Housing:Barrel

File Size 141.43K  /  5 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. 88CNQ060ASMPBF 88CNQ060APBF
OCR Text D-61 Package Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 s sine VF TJ @ 40 Apk, TJ= 1...5200 5.5 10000 V V V V mA mA pF nH V/ s @ 40A @ 80A @ 40A @ 80A Conditions TJ = 25 C TJ = 125 C ...
Description SCHOTTKY RECTIFIER 肖特基整流器

File Size 163.12K  /  7 Page

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    15KE110 15KE440A 15KE100 15KE100A 15KE10A 15KE110A 15KE150 15KE56 15KE22A

Leshan Radio Company
Part No. 15KE110 15KE440A 15KE100 15KE100A 15KE10A 15KE110A 15KE150 15KE56 15KE22A
OCR Text ... o r c u r r e n t ( i p p ) d e r a t i n g i n p e r c e n t a g e % i p p m , p e a k p u l s e c u r r e n t % c j , c a p a c i t a n c e , p f p m ( a v ) s t e a d y s t a t e p o w e r d i s s i p a t i o ...
Description GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

File Size 184.67K  /  9 Page

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    UN Semiconducctor INC
Part No. SM8S26A SM8S11A SM8S36 SM8S30A SM8S20A SM8S22A SM8S36A
OCR Text ...p ppm (10 /10000 s) 5200w p d 8w i fsm 700a t j max. 175 c use in sensitive electronics protection against voltage transients ...5200 watts power dissipation on infinite heat sink at t a =25 c (fig.1) p d 8.0 watt peak pu...
Description Surface Mount Transient Voltage Suppressors
Surface Mount Transient Voltage Suppressors (TVS)
   Surface Mount Transient Voltage Suppressors
   Surface Mount Transient Voltage Suppressors (TVS)

File Size 2,699.00K  /  4 Page

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    Microdc power Technology Co., Ltd
Part No. MH0509XD-2W MH0505XD-2W MH1212XD-2W MH1205XD-2W
OCR Text ...- - - - - - - x x x x x x x x d d d d d d d d - - - - - - - - 2w 2w 2w 2w 2w 2w 2w 2w (400) (400) (400) (400) product series in put v...5200 vdc leakage current 1 ma resistance 10 9 ohm capacitance 60 pf typ. output output output output...
Description 5.2 KVISOLATED 2WREGULATED SINGLE OUTPUT DIP24 Converters

File Size 374.54K  /  2 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT8020JFLL
OCR Text D S POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...5200 1000 190 195 27 130 12 14 39 10 760 715 1250 780 MIN TYP MAX Gate-Source Charge Gate-Drain ...
Description 40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 256.97K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT8020JLL_04 APT8020JLL04
OCR Text D S POWER MOS 7 (R) R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFET...5200 1000 190 195 27 130 12 14 39 10 760 715 1250 780 MIN TYP MAX UNIT Amps Volts ns C nC pF Gat...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 159.01K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT8020LFLL APT8020B2FLL
OCR Text ...e * FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25C unless otherwise specified. APT8020B2_LFLL UNIT Volts Amps 800 38 152 30 ...5200 1000 190 195 27 130 12 14 39 9 875 825 1450 985 MIN TYP MAX Gate-Source Charge Gate-Drain (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 244.54K  /  5 Page

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For d-5200 Found Datasheets File :: 698    Search Time::2.078ms    
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