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  d-16a Datasheet PDF File

For d-16a Found Datasheets File :: 2961    Search Time::0.969ms    
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    FML16N60ES

Fuji Electric
Part No. FML16N60ES
OCR Text ...-30v continuous drain current i d 16 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum av...16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 drain-source crossover charge q sw - 21 ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 392.46K  /  5 Page

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    FDB253210 FDB2532F085

Fairchild Semiconductor
Part No. FDB253210 FDB2532F085
OCR Text ... = 14m (typ.), v gs = 10v, i d = 33a ?q g (tot) = 82nc (typ.), v gs = 10v ? low miller charge ?low q rr body diode ? uis capability (s...16a, v gs = 6v, - 0.016 0.024 i d = 33a, v gs = 10v, t c = 175 o c - 0.040 0.048 c iss input ca...
Description N-Channel PowerTrench? MOSFET 150V, 79A, 16mΩ

File Size 203.43K  /  11 Page

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    FMI16N60E

Actel Corporation
Fuji Electric
Part No. FMI16N60E
OCR Text ...-30v continuous drain current i d 1 6 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maxi...16a v gs =10v - 76 114 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 22 33 avalanche...
Description FMI16N60E
N-CHANNEL SILICON POWER MOSFETFeatures

File Size 422.18K  /  5 Page

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    FMI16N50E

Fuji Electric
Part No. FMI16N50E
OCR Text ...-30v continuous drain current i d 16 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maxim...16a v gs =10v - 60 90 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 18 27 avalanche ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 419.75K  /  5 Page

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    FMI16N60ES

Fuji Electric
Part No. FMI16N60ES
OCR Text ...-30v continuous drain current i d 16 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maxim...16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 gate-drain charge q gd - 21 33 gate-drai...
Description N-CHANNEL SILICON POWER MOSFET

File Size 470.65K  /  5 Page

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    FMH16N60ES

Fuji Electric
Part No. FMH16N60ES
OCR Text ...-30v continuous drain current i d 16 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maxim...16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 gate-drain charge q gd - 21 33 gate-drai...
Description N-CHANNEL SILICON POWER MOSFET

File Size 477.94K  /  5 Page

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    FMC16N60E

Fuji Electric
Part No. FMC16N60E
OCR Text ...-30v continuous drain current i d 1 6 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maxi...16a v gs =10v - 76 114 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 22 33 avalanche...
Description N-CHANNEL SILICON POWER MOSFET

File Size 421.33K  /  5 Page

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    International Rectifier, Corp.
Part No. IRFY044CM
OCR Text d irfy044cm 60v 0.040 w 16a* provisional data sheet no. pd 9.1285c hexfet ? power mosfet hexfet technology is the key to international rectifiers advanced line of power mosfet transistors. the effi- cient geometry design achieves very low ...
Description 60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管)

File Size 142.06K  /  6 Page

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    FMC16N60ES

Fuji Electric
Part No. FMC16N60ES
OCR Text ...-30v continuous drain current i d 16 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maxim...16a v gs =10v - 56 114 nc gate-source charge q gs - 20 25.5 gate-drain charge q gd - 21 33 gate-drai...
Description N-CHANNEL SILICON POWER MOSFET

File Size 472.00K  /  5 Page

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    PM9106APE

SAMES
Part No. PM9106APE
OCR Text ...sition of the segments a, b, c, d, e, f and g are given in the diagram below: the full scale power displayed is 20 000 watts. an overflow i...16a rms into the sa9106ap at rated line current. values for rsh of less than 200 w should be avoid...
Description KPSE SERIES 单相电能测量模块采用5位LED显示

File Size 141.27K  /  10 Page

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