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class-ab Datasheet PDF File

For class-ab Found Datasheets File :: 4949 Search Time::1.953ms
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				ERICSSON[Ericsson]
Part No.	PTB20151
OCR Text	class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or...
Description	45 Watts 1.8-2.0 GHz PCN/PCS Power Transistor 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
File Size	638.91K / 5 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20162
OCR Text	... transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t...
Description	40 Watts, 470-900 MHz RF Power Transistor
File Size	41.67K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20170
OCR Text	class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and ...
Description	30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	260.81K / 5 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20171
OCR Text	class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and ...
Description	25 Watts, 935-960 MHz Cellular Radio RF Power Transistor
File Size	43.57K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20174
OCR Text	... transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used...
Description	90 Watts, 1400-1600 MHz RF Power Transistor
File Size	563.19K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20175
OCR Text	class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation...
Description	55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor
File Size	578.97K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTB20176
OCR Text	...it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. ...
Description	5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体 5 Watts, 1.78?.92 GHz RF Power Transistor
File Size	47.44K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20177
OCR Text	class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and...
Description	150 Watts, 925-960 MHz Cellular Radio RF Power Transistor
File Size	48.60K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20180
OCR Text	class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and...
Description	2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	42.79K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20187
OCR Text	class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and...
Description	4 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor 4 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor 4 Watts 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	43.01K / 2 Page	View it Online	Download Datasheet

For class-ab Found Datasheets File :: 4949 Search Time::1.953ms
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