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  cdma gps Datasheet PDF File

For cdma gps Found Datasheets File :: 851    Search Time::4.344ms    
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    MW7IC2040GNR1 MW7IC2040NBR1 MW7IC2040NR1

Freescale Semiconductor, Inc
Part No. MW7IC2040GNR1 MW7IC2040NBR1 MW7IC2040NR1
OCR Text ... * Typical Single - Carrier W - cdma Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Ban...gps PAE ACPR IRL P1dB IMDsym 29.5 16 -- -- -- -- -- -- -- -- -- -- -- -- 32 17.5 - 50 - 15 30 60 65 ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 921.96K  /  29 Page

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    MRF7S19120NR109

Freescale Semiconductor, Inc
Part No. MRF7S19120NR109
OCR Text ...de Lateral MOSFET Designed for cdma base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C f...gps D PAR ACPR IRL 16.5 30 5.7 -- -- 18 32 6.1 -38.5 -10 19.5 36 -- -35.5 -7 dB % dB dBc dB MRF7S...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 510.29K  /  14 Page

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    MRF19045LSR3 MRF19045LR3

Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MRF19045LSR3 MRF19045LR3
OCR Text ... to 2.0 GHz. Suitable for TDMA, cdma and multicarrier amplifier applications. * Typical cdma Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA ...gps 13 14.5 -- dB 21 23.5 -- % IM3 -- - 37 - 35 dBc ACPR -- ...
Description 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

File Size 565.98K  /  12 Page

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    MRF9135LR3 MRF9135L MRF9135LSR3

Motorola, Inc
Part No. MRF9135LR3 MRF9135L MRF9135LSR3
OCR Text ... station equipment. * Typical N-cdma Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS-95 cdma Pilot, Sync, Paging, Traffic Codes 8 Through ...gps 16 17.8 -- dB 22 25 -- % ACPR -- -47 -45 dBc IRL -- -13....
Description MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 403.73K  /  12 Page

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    MRFG35002N6T1

Freescale Semiconductor, Inc
Part No. MRFG35002N6T1
OCR Text ... * Typical Single - Carrier W - cdma Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 M...gps hD ACPR 8.5 23 -- 10 27 - 41 -- -- - 38 dB % dBc Typical RF Performance (In Freescale Test Fi...
Description GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR

File Size 205.73K  /  12 Page

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    RF2498 RF2498PCBA

RF Micro Devices
Part No. RF2498 RF2498PCBA
OCR Text cdma/Cellular/PCS/gps Handsets * Jcdma/gps Handsets * cdma Modem/Data Cards Product Description -A5.00 SQ. TRI-BAND/QUAD-MODE cdma/gps LOW NOISE AMPLIFIER/MIXER * Commercial and Consumer Systems * Portable Battery-Powered Equipment ...
Description TRI-BAND/QUAD-MODE cdma/gps LOW NOISE AMPLIFIER/MIXER

File Size 720.32K  /  20 Page

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    MRFG35002N6AT1

Freescale Semiconductor, Inc
Part No. MRFG35002N6AT1
OCR Text ... * Typical Single - Carrier W - cdma Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz...gps hD ACPR 8.5 23 -- 10 26.5 - 42 -- -- - 38 dB % dBc Typical RF Performance (In Freescale Test ...
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 185.45K  /  11 Page

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    MOTOROLA
Part No. MRF6S19060N
OCR Text ...teral MOSFETs Designed for N - cdma base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, cdma and multicarr...gps D IM3 ACPR IRL 14.5 24.5 -- -- -- 16 26 - 37 - 51 - 12 18.5 -- - 35 - 48 - 10 dB % dBc dBc dB ...
Description 1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs

File Size 605.95K  /  16 Page

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    MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3
OCR Text ...teral MOSFETs Designed for N - cdma base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, cdma and multicarr...gps D IM3 ACPR IRL 15 26 -- -- -- 16.1 28 - 37 - 51 - 15 18 -- - 35 - 48 -9 dB % dBc dBc dB MRF6S...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-cdma Lateral N-Channel RF Power MOSFETs

File Size 420.58K  /  12 Page

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For cdma gps Found Datasheets File :: 851    Search Time::4.344ms    
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