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  bondpad Datasheet PDF File

For bondpad Found Datasheets File :: 124    Search Time::0.953ms    
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    T8914VA-SF-F

Vishay Siliconix
Part No. T8914VA-SF-F
OCR Text ...ie height h 0.17 mm diameter of bondpad d 0.12 mm additional information (1) frontside metallization, anode aluminum backside metallizati on, cathode gold alloy dicing sawing die bonding technology epoxy bonding document number: 91 00...
Description Specification of GaAlAs IR Emitting Diode Chip

File Size 95.66K  /  4 Page

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    TB9414VA-SF-F

Vishay Siliconix
Part No. TB9414VA-SF-F
OCR Text ...ie height h 0.19 mm diameter of bondpad d 0.11 mm additional information (1) frontside metallization, anode aluminum backside metallization, cathode gold alloy dicing sawing die bonding technology epoxy bonding document number: 91 000...
Description Specification of GaAlAs IR Emitting Diode Chip

File Size 80.43K  /  4 Page

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    BCG13D

BeRex Corporation
Part No. BCG13D
OCR Text ... 1) die thickness 100um 2) bondpad metal thickness 2.8um 3) backside metal au, 5um 4) device is grounded through via holes esd rating esd rating: value: test: standard: class 1c passes <2000v human ...
Description 5-4000 MHz Cascadeable InGaP HBT Gain Block

File Size 275.62K  /  6 Page

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    T163VU-SF-F

Vishay Siliconix
Part No. T163VU-SF-F
OCR Text ...e height h 0.265 mm diameter of bondpad d 0.14 mm additional information (1) frontside metallization, anode aluminum backside metallizati on, cathode gold alloy dicing sawing die bonding technology epoxy bonding document number: 91 00...
Description Infrared Emitting Diode Chip, 950 nm, GaAs

File Size 82.07K  /  4 Page

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    T8514VB-SF-F

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Vishay Siliconix
Part No. T8514VB-SF-F
OCR Text ...ie height h 0.17 mm diameter of bondpad d 0.14 mm additional information (1) frontside metallization, anode aluminum backside metallizati on, cathode gold alloy dicing sawing die bonding technology epoxy bonding document number: 91 00...
Description Specification of GaAlAs IR Emitting Diode Chip

File Size 88.17K  /  4 Page

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    MAX1818EUAT

Maxim Integrated Products
Part No. MAX1818EUAT
OCR Text ....8 microns (as drawn) g. bondpad dimensions: 2.7 mil. sq. h . isolation dielectric: sio 2 i. die separation method: wafer saw v. quality assurance information a. quality assurance co...
Description PLASTIC ENCAPSULATED DEVICES

File Size 92.20K  /  8 Page

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    BCIF7

BeRex Corporation
Part No. BCIF7
OCR Text ... 1) die thickness 100um 2) bondpad metal thickness 2.8um 3) backside metal au, 5um 4) device is grounded through via holes berex ...
Description 50-800 MHz Internally Matched IF Amplifier

File Size 353.85K  /  7 Page

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    BCT05CV

BeRex Corporation
Part No. BCT05CV
OCR Text ... 1) die thickness 100um 2) bondpad metal thickness 2.8um 3) backside metal au, 5um 4) device is grounded through via holes berex ...
Description 5-4000 MHz Wideband Drive Amplifier

File Size 292.51K  /  8 Page

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    TS8520VA TS8520VA-SF-F

Vishay Siliconix
Part No. TS8520VA TS8520VA-SF-F
OCR Text ...ie height h 0.17 mm diameter of bondpad d 0.107 mm additional information frontside metallization, anode gold alloy backside metallization, cathode gold alloy dicing sawing die bonding technology epoxy bonding ts8520va www.vishay.com v...
Description Specification of High Power IR Emitting Diode Chip

File Size 90.51K  /  4 Page

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    TS8542VA TS8542VA-SF-F

Vishay Siliconix
Part No. TS8542VA TS8542VA-SF-F
OCR Text ...ie height h 0.17 mm diameter of bondpad d 0.127 mm additional information frontside metallization, anode gold alloy backside metallization, cathode gold alloy dicing sawing die bonding technology epoxy bonding ts8542va www.vishay.com v...
Description Specification of High Power IR Emitting Diode Chip

File Size 96.75K  /  4 Page

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For bondpad Found Datasheets File :: 124    Search Time::0.953ms    
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