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  at-200 Datasheet PDF File

For at-200 Found Datasheets File :: 222233    Search Time::3.422ms    
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    Vectron
Part No. OX-200
OCR Text ...or re ow process compatible ? at-cut and sc_cut crystal options ? low pro le compact package ? base stations ? test equipment ? synth...200 frequency stabilities 1 (at-cut crystal-standard - ) parameter min typical max units condition ...
Description Oven Controlled Crystal Oscillator

File Size 250.64K  /  5 Page

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    GS8182T18BD-200 GS8182T18BD-200T GS8182T18BD-250IT GS8182T18BD-167I GS8182T18BD-200IT

GSI TECHNOLOGY
Part No. GS8182T18BD-200 GS8182T18BD-200T GS8182T18BD-250IT GS8182T18BD-167I GS8182T18BD-200IT
OCR Text ... i/o srams designed to operat e at the speeds needed to implement economical high perf ormance networking systems. clocking and addressing...200 -167 tkhkh 2.5 ns 2.67 ns 3.0 ns 3.3 ns 4.0 ns 5.0 ns 6.0 ns tkhqv 0.45 ns 0.45 ns 0.45 ns 0.45 ...
Description 1M X 18 DDR SRAM, 0.45 ns, PBGA165
1M X 18 DDR SRAM, 0.5 ns, PBGA165

File Size 329.42K  /  37 Page

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    BUK456-200 BUK456-200A BUK456-200B

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK456-200 BUK456-200A BUK456-200B
OCR Text ...velopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B DEFINITIONS Data sheet status Objective specification Product specificat...
Description PowerMOS transistor

File Size 62.54K  /  7 Page

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    TBU-CA065-200-WH TBU-CA065-200-WH1111

Bourns Electronic Solutions
Part No. TBU-CA065-200-WH TBU-CA065-200-WH1111
OCR Text ...e?ected in current measurement at the time the gd t device is triggere d. 1 ch1 ch1 -172 v ma 200 ns 31.00 % 1.00 a ch4 200 v ch1 ma x 508 v tr ig? pr ev u ch4 ma x 1.74 a t t 4 the ohm unit following the current units shown for channe...
Description RS-485 Port Protection

File Size 1,039.01K  /  2 Page

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    NXP Semiconductors N.V.
Part No. BYV79E-200
OCR Text ...t, rugged fig.7. maximum t rr at t j = 25 ?c. fig.8. maximum i rrm at t j = 25 ?c. fig.9. typical and maximum forward characteristic ...200 semiconductors product specification rectifier diodes byv79e series ultrafast, rugged ...
Description Ultrafast power diode BYV79E-200<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<week 1, 2005,;

File Size 99.28K  /  8 Page

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    SBYV28-200 SBYV28-150 SBYV28-50 SBYV28 SBYV28-100

Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. SBYV28-200 SBYV28-150 SBYV28-50 SBYV28 SBYV28-100
OCR Text ...Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Maximum repetitive peak reverse voltage Ma...200 Units VRRM VRMS VDC V(BR) IF(AV) 50 35 50 55 100 70 100 110 3.5 150 105 150 165 200 140 200 220 ...
Description TL Series Toggle Switch, 1 pole, 3 position, Screw terminal, Locking Lever 软恢复超快塑胶整流器
Diodes
Soft Recovery Ultrafast Plastic Rectifier

File Size 20.80K  /  2 Page

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    Shenzhen Taychipst Electronic Co., Ltd
Part No. BYW100-200 DO-15
OCR Text ... determination of trr and i rm at 100 c under users conditions symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i frm repetitive peak forward current * tp = 5 m s f = 1khz 80 a i f(av) average forward current * t...
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 820.82K  /  2 Page

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    BYV28-200 BYV28-400 BYV28-300 BYV28-600

Philips Semiconductors
Part No. BYV28-200 BYV28-400 BYV28-300 BYV28-600
OCR Text ...F = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.22 3 IR = 0.1 mA 55 110 165 220 330 440 560 675 - - - - - - - - - - - - - - - - - - ...200 BYV28-300 and 400 BYV28-500 and 600 dI R -------dt maximum slope of reverse recovery current whe...
Description Ultra fast low-loss controlled avalanche rectifiers

File Size 86.43K  /  16 Page

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