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				SILICON STORAGE TECHNOLOGY INC
Part No.	SST32HF202-0000'>90-4C-L3K SST32HF402-0000'>90-4C-L3KE SST32HF202-0000'>90-4E-L3KE
OCR Text	...d access times: ? flash: 70 and 0000'>90 ns ? sram: 70 and 0000'>90 ns latched address and data for flash flash fast erase and word-program: ? secto...000 cycles. data retention is rated at greater than 100 years. the sst32hf202/402/802 devices consis...
Description	SPECIALTY MEMORY CIRCUIT, PBGA48
File Size	356.53K / 30 Page	View it Online	Download Datasheet

				SILICON STORAGE TECHNOLOGY INC
Part No.	SST32HF1641C-0000'>90-4E-BFS SST32HF3281-70-4E-BFS SST32HF1641-70-4E-BFS SST32HF64161C-70-4E-LFS
OCR Text	...ccess times: ? flash: 70 ns and 0000'>90 ns ? sram: 70 ns and 0000'>90 ns latched address and data for flash flash fast erase and word-program: ? se...000 cycles. data retention is rated at greater than 100 years. the sst32hfx1/x1c devices consist of ...
Description	SPECIALTY MEMORY CIRCUIT, PBGA63
File Size	465.93K / 39 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc. Microchip Technology, Inc.
Part No.	SST32HF164-0000'>90-4C-L3K SST32HF164-70-4C-L3K SST32HF162-70-4E-L3K SST32HF164-70-4E-L3K SST32HF164-0000'>90-4E-L3K SST32HF162-70-4C-L3K SST32HF802-70-4C-L3K SST32HF802-70-4E-L3K
OCR Text	...ccess times: ? flash: 70 ns and 0000'>90 ns ? sram: 70 ns and 0000'>90 ns latched address and data for flash flash fast erase and word-program: ? se...000 cycles. data retention is rated at greater than 100 years. the sst32hf802/162/164 devices consis...
Description	PSoC® Mixed-Signal Array Spread Spectrum Clock Generator PSOC POD FOR CY8C21X34 64-Kbit (8K x 8) Static RAM MIXED MEMORY\|SRAM EEPROM\|CMOS\|BGA\|48PIN\|PLASTIC 混合存储器\|静态存储器EEPROM中\|的CMOS \| BGA封装\| 48PIN \|塑料
File Size	354.90K / 30 Page	View it Online	Download Datasheet

				Bourns, Inc. BOURNS INC
Part No.	8230-0000'>90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-58-RC 8230-48-RC 8230-50-RC 8230-54-RC 8230-30-RC 8230-14-RC 8230-40-RC 8230-24-RC 8230-36-RC 8230-32-RC
OCR Text	...errite 8230-32-rc 3.3 10 45 7.9 0000'>90 0.85 380 ferrite 8230-34-rc 3.9 10 45 7.9 82 1.0 350 ferrite 8230-36-rc 4.7 10 45 7.9 75 1.2 320 ferrite ...000 10 30 0.79 3.4 72 38 ferrite specifications are subject to change without notice. customers sh...
Description	Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:60000'>90MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:0000'>90MHz; Core Material:Iron; Leaded Process Compatible:Yes
File Size	187.61K / 2 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc.
Part No.	SST34HF3223B-0000'>90-4C-LP SST34HF3223B-70-4C-LP SST34HF3243B-70-4E-LP SST34HF3243B-70-4C-LP SST34HF3223B-70-4E-LP
OCR Text	...ead access time ? flash: 70 and 0000'>90 ns ? sram: 70 and 0000'>90 ns latched address and data fast erase and word-program: ? sector-erase time: 18...000 cycles. data retention is rated at greater than 100 years. with high performance word- program, ...
Description	KIT ISR PROGRAMMING NO WARP One-PLL General-Purpose Flash-Programmable and 2-Wire Serially Programmable Clock Generator 混合存储器\|静态存储器EEPROM中\|CMOS \| BGA封装\| 56PIN \|塑料 MIXED MEMORY\|SRAM EEPROM\|CMOS\|BGA\|56PIN\|PLASTIC 混合存储器\|静态存储器EEPROM中\|的CMOS \| BGA封装\| 56PIN \|塑料
File Size	352.47K / 30 Page	View it Online	Download Datasheet

				SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
Part No.	SST34HF1601-0000'>90-4C-LFP SST34HF1621-70-4C-LFP SST34HF1641-70-4C-LFP SST34HF1641-0000'>90-4C-LFP SST34HF1601-70-4E-L1P SST34HF1601-0000'>90-4E-L1P SST34HF1621-70-4E-L1P SST34HF1621-0000'>90-4E-L1P SST34HF1641-70-4E-L1P SST34HF1641-0000'>90-4E-L1P SST34HF1601-70-4C-LFP SST34HF1621-0000'>90-4E-LFP SST34HF1621-0000'>90-4C-L1P SST34HF1601-0000'>90-4E-LFP SST34HF1601-70-4E-LFP SST34HF1641-0000'>90-4E-LFP SST34HF1641-0000'>90-4C-L1P SST34HF1641-70-4E-LFP SST34HF1621-70-4E-LFP SST34HF1621-70-4C-L1P SST34HF1641
OCR Text	...ead access time ? flash: 70 and 0000'>90 ns ? sram: 70 and 0000'>90 ns latched address and data fast erase and word-program: ? sector-erase time: 18...000 cycles. data retention is rated at greater than 100 years. with high per- formance word-program,...
Description	16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56 16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory 16兆位并行快闪2 / 4兆位的SRAM ComboMemory
File Size	469.46K / 32 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc.
Part No.	SST34HF1681-0000'>90-4E-L1P SST34HF1601-0000'>90-4C-L1P SST34HF1601-70-4C-L1P SST34HF1681-0000'>90-4C-L1P
OCR Text	...ead access time ? flash: 70 and 0000'>90 ns ? sram: 70 and 0000'>90 ns latched address and data fast erase and word-program: ? sector-erase time: 18...000 cycles. data retention is rated at greater than 100 years. with high performance word-pro- gram,...
Description	Self-Calibrating, 16-Bit Analog-to-Digital Converter 6-SOT-23 -40 to 85 16 Mbit Concurrent SuperFlash 8 Mbit SRAM ComboMemory 16兆位的SuperFlash 8兆位并行SRAM的ComboMemory
File Size	455.93K / 30 Page	View it Online	Download Datasheet

				Microchip Technology Inc.
Part No.	SST38VF6404-0000'>90-5C-EKE SST38VF6404-0000'>90-5C-B3KE SST38VF6403-0000'>90-5C-B3KE SST38VF6401-0000'>90-5C-B3KE
OCR Text	...d and page read access times: ? 0000'>90 ns read access time ? 25 ns page read access times - 4-word page read buffer ? latched address and data ?...000 cycles minimum endur- ance. data retention is rated at greater than 100 years. the sst38vf6401/6...
Description
File Size	1,273.13K / 55 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
Part No.	SST39WF1601-0000'>90-4C-MBQE SST39WF1602-0000'>90-4C-MBKE SST39WF1602-0000'>90-4C-MBQE SST39WF1601-0000'>90-4C-MBKE SST39WF1601-0000'>90-4I-B3KE SST39WF1601-0000'>90-4I-MBKE SST39WF1601-0000'>90-4I-B3QE SST39WF1601-0000'>90-4I-MBQE SST39WF1601-0000'>90-4C-B3KE SST39WF1602-0000'>90-4I-B3KE SST39WF1602-0000'>90-4C-B3KE SST39WF1601-0000'>90-4C-B3QE SST39WF1602-0000'>90-4C-B3QE SST39WF1602-0000'>90-4I-B3QE SST39WF1602-0000'>90-4I-MBQE
OCR Text	...bits * Fast Read Access Time: - 0000'>90 ns * Latched Address and Data * Fast Erase and Word-Program: - Sector-Erase Time: 36 ms (typical) - Block...000 cycles. Data retention is rated at greater than 100 years. The SST39WF1601/1602 devices are suit...
Description	64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 1.8V PROM, 0000'>90 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
File Size	630.36K / 29 Page	View it Online	Download Datasheet

				Microchip Technology Inc.
Part No.	SST39WF400A-0000'>90-4C-C1QE SST39WF400A-0000'>90-4C-M1Q SST39WF400A-0000'>90-4C-M1QE SST39WF400A-0000'>90-4I-M1Q SST39WF400A-0000'>90-4I-C1Q SST39WF400A-0000'>90-4I-C1QE SST39WF400B-70-4I-MAQE SST39WF400A-0000'>90-4I-M1QE SST39WF400A-0000'>90-4C-B3KE-T SST39WF400A-0000'>90-4I-B3KE SST39WF400A-0000'>90-4I-M1QE-T SST39WF400B-70-4C-MAQE SST39WF400A-0000'>90-4I-B3KE-T SST39WF400A-0000'>90-4I-ZKE
OCR Text	...locks ? fast read access time ? 0000'>90 ns ? latched address and data ? fast erase and word-program ? sector-erase time: 36 ms (typical) ? block-...000 cycles. data retention is rated at greater than 100 years. the sst39wf400a device is suited for...
Description
File Size	760.53K / 26 Page	View it Online	Download Datasheet

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