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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/LB3 K4H560838D-TC/LA0 K4H561638D-TC/LA0 K4H561638D-TC/LB0 K4H560438D-TC/LB0 K4H560438D-TC/LA2 K4H560438D-TCB3 K4H561638D-TC/LB3 K4H561638D-TC/LA2 K4H560438D-TC/LB3 K4H560438D-TC/LA0
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| OCR Text |
...q 1 5 v ssq 6 nc 7 dq 2 8 v ddq 9 nc 10 dq 3 11 v ssq 12 ba 0 20 cs 19 ras 18 cas 17 we 16 nc 15 v ddq 14 nc 13 v dd 27 a 3 26 a 2 25 a 1 24...bank address ba0-ba1 row address a0-a12 auto precharge a10 ms-024fc organization column address 64mx... |
| Description |
64M X 4 DDR DRAM, 0.7 ns, PDSO66 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85
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| File Size |
239.34K /
25 Page |
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Samsung Electronic
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| Part No. |
M470L6423CK0
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| OCR Text |
...nt side/back side)
Pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 Front VREF VSS DQ0 DQ1...Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip s... |
| Description |
64Mx64 200pin DDR SDRAM SODIMM based on DDP 64Mx8 Data Sheet
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| File Size |
160.51K /
14 Page |
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it Online |
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Nanya Techology
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| Part No. |
NT5DS32M8BF NT5DS64M4BT
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| OCR Text |
...ii (x4 / x8 / x16) 1 2 3 4 5 6 9 10 11 12 13 14 7 8 15 16 17 18 19 20 21 22 66 65 64 63 62 61 58 57 56 55 54 53 60 59 52 51 50 49 48 47 46 ...bank). cke is syn- chronous for power down entry and exit, and for self refresh entry. cke is asynch... |
| Description |
(NT5DSxxMxBx) 256Mb DDR SDRAM
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| File Size |
1,953.01K /
80 Page |
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it Online |
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HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
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| Part No. |
HM5212325FBPC HM5212325FBPC-B60
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| OCR Text |
... 12 ns CKE = VIH, t CK = 6 7 4 9 1, 2, 6 2, 7 1, 2, 4 2, 9 Test conditions Burst length = 1 t RC = min Notes 1, 2, 3
I CC4 I CC4 I CC5 I...bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once p... |
| Description |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
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| File Size |
57.42K /
13 Page |
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it Online |
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Price and Availability
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