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  7a 400v Datasheet PDF File

For 7a 400v Found Datasheets File :: 731    Search Time::2.156ms    
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    APT14F100S APT14F100B09

Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
Part No. APT14F100S APT14F100B09
OCR Text ... 35.71mh, r g = 25 ? , i as = 7a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is defned as a fxed capacitance...400v, t j = 125c test conditions v ds = 50v , i d = 7a v gs = 0v , v ds = 25v f = 1m...
Description Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247aD

File Size 274.39K  /  4 Page

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    W7NA80

STMicroelectronics
Part No. W7NA80
OCR Text ...d(o n) xr ds(on )ma x v gs =10v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d...400v i d = 3.5 a r g =47 w v gs =10v (see test circuit, figure 3) 3.5 9.5 45 125 ns ns (di/dt) on t...
Description Search --To STW7NA80

File Size 155.44K  /  10 Page

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    LAMBDA[DENSEI-LAMBDA]
ITT, Corp.
Part No. PH300F280- PH300F280-15 PH300F280-12 PH300F280 PH300F280-2 PH300F280-24 PH300F280-5 PH300F280-3 PH300F280-28
OCR Text ...2 (24Vin) PH100F24-15 100.5W 6.7a 15V 100.8W 4.2A 24V PH100F24-24 100.8W 3.6A 28V PH100F24-28 302.4W 10.8A 28V PH300F24 PH300F24-28 33W 10A 3.3V PH50S48-3.3 50W 10A 5V PH50S48-5 50.4W 4.2A 12V PH50S48-12 PH50S48 51W 3.4A 15V ...
Description    Single output DC-DC converter 50W ~ 300W
Single output DC-DC converter 50W ~ 300W 单输出DC - DC转换0300W

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    Mitsubishi Electric Corporation
Part No. FK14KM-9
OCR Text ... i d = 1ma, v ds = 10v i d = 7a, v gs = 10v i d = 7a, v gs = 10v i d = 7a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v...400v 200v tch = 25? i d = 14a 40 32 24 16 8 0 0 0.8 1.6 2.4 3.2 4.0 t c = 125? 25? 75? v gs = 0v ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 64.24K  /  5 Page

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    AP13N50R-HF

Advanced Power Electronics Corp.
Part No. AP13N50R-HF
OCR Text ...on-resistance 2 v gs =10v, i d =7a - - 0.52 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v...400v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gat...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 54.81K  /  4 Page

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    BU921PFI

Inchange Semiconductor Company Limited
Part No. BU921PFI
OCR Text ...itter Saturation Voltage IC= 7a; IB= 140mA B 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.2 ...400v; IB= 0 VEB= 5V; IC= 0 .cn mi e mA mA 50 mA 2.5 V isc Websitewww.iscs...
Description Silicon NPN Darlington Power Transistor

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    FS7KM-12A

Renesas Electronics Corporation
Part No. FS7KM-12A
OCR Text .................................. 7a GATE DRAIN SOURCE TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier...400v 12 125C 8 8 4 TCh = 25C ID = 7a 4 VGS = 0V Pulse Test 0 0 20 ...
Description Nch POWER MOSFET

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    07N70CR-A 07N70CP-A SSM07N70CR-A SSM07N70CP SSM07N70CP-A

Silicon Standard
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 07N70CR-A 07N70CP-A SSM07N70CR-A SSM07N70CP SSM07N70CP-A
OCR Text ...BVDSS R DS(ON) I D 675V 1.2 7a DESCRIPTION The SSM07N70C series is specially designed as a main switching device for universal 90~26...400v Ciss VGS , Gate to Source Voltage (V) 12 10 V DS =480V 8 C (pF) Coss 100 ...
Description N Channel Enhancement mode Power MOSFET
N-CHENNEL Enhancement-mode Power MOSFET

File Size 165.68K  /  6 Page

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    FS14SM-18A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS14SM-18A
OCR Text ...S = 0V ID = 1mA, VDS = 10V ID = 7a, VGS = 10V ID = 7a, VGS = 10V ID = 7a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 900 30 -- -...400v 600V 24 8 16 25C 4 8 0 0 40 80 120 160 200 0 0 ...
Description HIGH-SPEED SWITCHING USE

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    HY7N80FT HY7N80T

HY ELECTRONIC CORP.
Part No. HY7N80FT HY7N80T
OCR Text ...-source voltage v ds 800 800v / 7a n-channel enhancement mode mosfet parameter symbol gate-source voltage v gs i d 7 7 continuous drain curr...400v i d =7a v gs =10v r g =25 w v ds =25v v gs =0v f=1.0m hz source-drain diode v gs =0v i s =7...
Description 800V / 7a N-Channel Enhancement Mode MOSFET

File Size 215.86K  /  4 Page

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