| |
|
 |
NTE[NTE Electronics]
|
| Part No. |
NTE2348
|
| OCR Text |
.... . . . . . . . . . . . . . . . 6a Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....800v, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 800mA VCE = 5V, IC = 4A VCE = 10V, IC 800mA VCB = 10V, ... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
Silicon NPN Transistor High Voltage / High Speed Switch
|
| File Size |
22.08K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SANYO
|
| Part No. |
2SC3992
|
| OCR Text |
...ime Symbol VCE(sat) VBE(sat) IC=6a, IB=1.2A IC=6a, IB=1.2A 1100 800 7 800 0.5 3.0 0.3 Conditions Ratings min typ max 2.0 1.5 Unit V V V V V V s s s
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=6a, IB1=-I... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/12A Switching Regulator Applications
|
| File Size |
108.31K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
SavantIC
|
| Part No. |
2SC3461
|
| OCR Text |
... fe-1 dc current gain i c =0.6a ; v ce =5v 10 40 h fe-2 dc current gain i c =3a ; v ce =5v 8 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 155 pf f t transition frequency i c =0.6a ; v ce =10v 15 mhz switchin... |
| Description |
SILICON POWER TRANSISTOR
|
| File Size |
239.67K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO
|
| Part No. |
2SC4427
|
| OCR Text |
...L=2mH, Clamped ton IC=3A, IB1=0.6a, IB2=-1.2A, RL=133, VCC=400V tstg IC=3A, IB1=0.6a, IB2=-1.2A, RL=133, VCC=400V tf IC=3A, IB1=0.6a, IB2=-1.2A, RL=133, VCC=400V
Switching Time Test Circuit
No.2850-2/4
2SC4427
No.2850-3/4
2... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/4.5A Switching Regulator Applications
|
| File Size |
107.24K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
CET[Chino-Excel Technology]
|
| Part No. |
CEF07N8
|
| OCR Text |
... = 50V, ID =4A VDD = 400V, ID = 6a, VGS = 10V RGEN=25
800 50 100 2 1.8 4 3 32 68 194 70 70 45 95 230 98 85 4 2.0
V A nA
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward T... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
42.34K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO
|
| Part No. |
2SC4430
|
| OCR Text |
... Symbol VCE(sat) VBE(sat) fT IC=6a, IB=1.2A IC=6a, IB=1.2A VCE=10V, IC=0.8A VCB=10V, f=1MHz 1100 800 7 800 0.5 3.0 0.3 15 215 Conditions Ratings min typ max 2.0 1.5 Unit V V MHz pF V V V V s s s
Cob V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA,... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/12A Switching Regulator Applications
|
| File Size |
112.48K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
