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D2396 ESD3V PCA9546A MFL2815D CDP1824E PSA92 PSA92 1RB1WGU
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  539 Datasheet PDF File

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...997 File Number 2209.2 5-1 IRF244, IRF245, IRF246, IRF247 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF24...39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 IRF244,...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C V...39 87 Max. Units Conditions --- S VDS = 50V, ID = 0.96A 33 ID = 0.96A 7.1 nC VDS = 240V 17 VGS = 10V...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ... 110 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resist...39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE ...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter ...39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE ...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text .... (1.6mm) from case for 10s) 11.5(typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 01/24/01 IRF360 Electr...39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...4 20 14 9.9 7.6 6.3 6.3 6.3 6.2 5.7 5.3 4.8 3.8 3.5 3.3 3.0 2.8 2.6 2.4 2.25 2.10 1.95 1.85 1.40 RATED DCR DC MAX. CURRENT () (mA) 0.15 0.16...39 0.43 0.48 0.52 0.58 0.63 0.72 0.77 0.84 0.94 1.03 1.12 1.22 1.34 1.47 1.62 1.80 3.7 4.2 4.6 5.1 5...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...C Reference to 25C, ID = 1mA 12.5 VGS = 10V, ID = 15A m 17 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VD...39 49 42 62 62 A 248 1.3 --- 59 74 63 93 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ...Voltage and Current S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA...39.60000 i (sec) 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= i/Ri Ci i/Ri t2 No...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ... 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 Min. Typ. 2890 590 230 140 18 75 19 43 85 56 190 27 135 35 120 130 98 ns nC pF Max. Unit SOURCE - DRAIN DIODE RATINGS AN...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...10 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Paramete...39 63 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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