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  50v 12a Datasheet PDF File

For 50v 12a Found Datasheets File :: 1865    Search Time::0.89ms    
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    FQP12N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP12N60
OCR Text ...2. L = 13mH, IAS = 10.5A, VDD = 50v, RG = 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fair...
Description 600V N-Channel MOSFET

File Size 530.72K  /  8 Page

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    FQPF12N60 FQPF12N60T

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF12N60 FQPF12N60T
OCR Text ... 2. L = 43mH, IAS = 5.8A, VDD = 50v, RG = 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fair...
Description 600V N-Channel MOSFET
600V N-Channel QFET

File Size 547.79K  /  8 Page

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    HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF75307D3NL

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF75307D3NL
OCR Text ...50A, VGS = 0V (Figure 11) VDS = 50v, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 100 V A A nA Gate to Source Leakag...12a ID = 7.5A ID = 4A 6 8 10 Qg, GATE CHARGE (nC) NOTE: Refer to Fairchild Application Notes A...
Description TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 15A条(丁)|52AA
15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

File Size 214.26K  /  10 Page

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    HUFA75307D3 HUFA75307D3S HUFA75307P3 HUFA75307D3ST

FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA75307D3 HUFA75307D3S HUFA75307P3 HUFA75307D3ST
OCR Text ...50A, VGS = 0V (Figure 11) VDS = 50v, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 100 V A A nA Gate to Source Leakag...12a ID = 7.5A ID = 4A 6 8 10 Qg, GATE CHARGE (nC) NOTE: Refer to Fairchild Application Notes A...
Description 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs

File Size 214.68K  /  10 Page

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    IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 2.2A 23 I D = 3.6A 5.4 nC VDS = 480V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 3.6A...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 0 25 50 75 100 125 150 Starting ...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

File Size 145.74K  /  10 Page

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    IRFBC30A

International Rectifier, Corp.
Part No. IRFBC30A
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 2.2A 23 ID = 3.6A 5.4 nC VDS = 480V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 3.6A ...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 St...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

File Size 99.53K  /  8 Page

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    IRFI540N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFI540N
OCR Text ...DS = VGS, ID = 250A --- S VDS = 50v, ID = 16A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V ...12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 300 200 100 0 V D D = 25V ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.052ohm,身份证\u003d 20A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.052ohm/ Id=20A)

File Size 127.71K  /  8 Page

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    IRFP064V

International Rectifier
Part No. IRFP064V
OCR Text ... 1.0 0.5 1 4.0 V DS = 50v 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 ...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 150 0 25 50 75 100 125 150 175 Start...
Description From old datasheet system
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)

File Size 152.71K  /  8 Page

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    IRFP22N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP22N60K
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 13A 150 ID = 22A 45 nC VDS = 480V 76 VGS = 10V --- VDD = 300V --- ID = 22A ns --- RG = 6.2 --- V...12a. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS I AS Fig 12d. Unclamped Induct...
Description SMPS MOSFET MOSFET的开关电

File Size 169.46K  /  8 Page

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    IRFP23N50L

International Rectifier, Corp.
Part No. IRFP23N50L
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 14A 150 ID = 23A 44 nC VDS = 400V 72 VGS = 10V, See Fig. 6 and 13 --- VDD = 250v --- ID = 23A ns ...12a) ISD 23A, di/dt 430A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRFP23N50L 100 V...
Description Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 0.190ohm,身份证\u003d 23A条)

File Size 102.63K  /  8 Page

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For 50v 12a Found Datasheets File :: 1865    Search Time::0.89ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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