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  5-1200a Datasheet PDF File

For 5-1200a Found Datasheets File :: 456    Search Time::1.875ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM600HU-24H
OCR Text ...110.0 93.00.25 80.0 62.00.25 13.5 9.5 14.5 Dimensions H J K L M N P Inches 0.96 0.22 1.14 0.85 Millimeters 24.5 5.5 29.0 21.5 34 +1...1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ....
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 40.83K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM600HU-24H
OCR Text ...110.0 93.00.25 80.0 62.00.25 13.5 9.5 14.5 Dimensions H J K L M N P Inches 0.96 0.22 1.14 0.85 1.34 +0.04/-0.02 0.26 Dia. Millimeters 24.5 5...1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ....
Description Single IGBTMOD 600 Amperes/1200 Volts
Single IGBTMOD 600 Amperes/1200 Volts

File Size 55.98K  /  4 Page

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    http://
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. DFM1200EXM12-A000
OCR Text ...d heat sinks for safety. 4(A1) 5(A2) External connection External connection for single 3600A diode application Fig. 1 Circuit diagram ...1200A IF = 1200A, Tvj = 125C L Inductance Min. Typ. 1.9 2.1 TBD Max. 20 2.2 2.4 Units mA V V nH S...
Description Fast Recovery Diode Module Preliminary Information

File Size 119.16K  /  7 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM1200FXM12-A000
OCR Text ...th mounting grease) -40 125 125 5 10 C C Nm Nm 8 C/kW Min. Typ. - Symbol Rth(j-c) Parameter Thermal resistance - diode (per arm) Ma...1200A, dIF/dt = 9000A/s, VR = 600V Min. Typ. 800 200 80 Max. Units A C mJ Tvj = 125C unless state...
Description Fast Recovery Diode Module Preliminary Information

File Size 99.22K  /  7 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM1200FXM18-A000
OCR Text 5 April 2001 FEATURES s Low Reverse Recovery Charge s High Switching Speed s Low Forward Voltage Drop s Isolated Base s Dual Diodes Can ...1200A 2400A External connection 1(C1) 2(C2) APPLICATIONS s Brake Chopper Diode s Boost and Bu...
Description Fast Recovery Diode Module Preliminary Information

File Size 99.61K  /  7 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM600FXM12-A000
OCR Text ...th mounting grease) -40 125 125 5 10 C C Nm Nm 8 C/kW Min. Typ. - Symbol Rth(j-c) Parameter Thermal resistance - diode (per arm) Max. 40 Units C/kW 2/7 www.dynexsemi.com DFM600FXM12-A000 STATIC ELECTRICAL CHARACTERIS...
Description Fast Recovery Diode Module Preliminary Information

File Size 99.24K  /  7 Page

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    1MBI1200UC-170

Fuji Electric
Part No. 1MBI1200UC-170
OCR Text ...mmendable Value : Mounting 4.25~5.75 Nm (M6) Main Terminals 8~10 Nm (M8) Sense Terminals 1.8~2.1 Nm (M4) Continuous 1ms Tc=25C Tc=80C Tc=25C...1200A Tj= 25C Tj=125C Tj= 25C Tj=125C min. 5.5 - Characteristics typ. max. 6.5 2.20 2.55 2.0...
Description IGBT MODULE

File Size 496.17K  /  13 Page

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    CM1200HB-50H CM1200HB-50H05

Mitsubishi Electric Semiconductor
Part No. CM1200HB-50H CM1200HB-50H05
OCR Text ...20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - 7MOUNTING HOLES 38 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transis...1200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1250V, IC = 1200A, VGE = 15V VCC = 1250V, IC = 1...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 47.01K  /  4 Page

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    DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. DIM1200ESM33-A000 ESM33-A000
OCR Text ...onnections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 4 C/kW 17 C/kW Min. Typ. Max. 8.5 Units C/kW Caution: This device is sensitive to e...1200A VGE = 15V, IC = 1200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward cu...
Description Single Switch IGBT Module Preliminary Information

File Size 194.37K  /  10 Page

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    CM1200E4C-34N

Mitsubishi Electric Semiconductor
Part No. CM1200E4C-34N
OCR Text ...DRAWING & CIRCUIT DIAGRAM 1300.5 570.25 570.25 4 - M8 NUTS Dimensions in mm 4(C) C 2(A) 4 2 1240.25 1400.5 200.1 400.2 G E...1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 56.47K  /  6 Page

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For 5-1200a Found Datasheets File :: 456    Search Time::1.875ms    
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