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TOSHIBA
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| Part No. |
TK12A53D
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| OCR Text |
... = 5.5 v 6 6.5 7 8 10 7.5 40 30 10 10 6 4 0 0 2 4 6 8 10 v gs = 5 v 5.5 6 6.5 7 10 8 2 8 r ds (on) ? i d ...ch-c) = 2.78c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 single pulse ?15 v 15 v i ar b... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
175.99K /
6 Page |
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it Online |
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http:// FUJI[Fuji Electric]
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| Part No. |
2SK1088 2SK1088-M
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| OCR Text |
... 10 0,2 10 0,26 0,20 10 900 150 40 10 40 150 30 1,1 100
Max. 2,5 500 1,0 100 0,40 0,30 1200 230 60 15 60 230 45 1,5
Unit V V A mA nA ...ch-a) R
th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 62,5 3,5... |
| Description |
N-channel MOS-FET
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| File Size |
181.89K /
2 Page |
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it Online |
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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| Part No. |
HAT2170H-EL-E HAT2170H
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| OCR Text |
...ch-C Tch Tstg
Note1
Ratings 40 20 45 180 45 30 72 30 4.17 150 -55 to +150
Unit V V A A A A mJ W C/W C C
Rev.5.00, Sep 26, 2005, pa...ch - c(t) = s (t) * ch - c ch - c = 4.17C/ W, Tc = 25C PDM
t ho pu lse
0.05
0.03
0.02 1 0.0
1... |
| Description |
Silicon N Channel MOSFET Power Switching
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| File Size |
83.70K /
8 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HAT2195R
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| OCR Text |
...sing the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Rev.3.00, Apr.01.2004, page 1 of 6
HAT2195R
Electrical Characteristics
...ch - f(t) = s (t) x ch - f ch - f = 83.3C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.... |
| Description |
Silicon N Channel Power MOS FET Power Switching
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| File Size |
80.22K /
7 Page |
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it Online |
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http:// RENESAS[Renesas Electronics Corporation]
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| Part No. |
HAT2244WP-EL-E HAT2244WP
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| OCR Text |
...Power vs. Temperature Derating
40 1000 10 s
Maximum Safe Operation Area
Pch (W)
Drain Current ID (A)
100
1 m s
30
10
...ch - c(t) = s (t) * ch - c ch - c = 5C/ W, Tc = 25C
PDM
0.001
PW T
D=
PW T
0.0001 10
... |
| Description |
Silicon N Channel Power MOS FET Power Switching
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| File Size |
115.12K /
8 Page |
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it Online |
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