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  4.800v Datasheet PDF File

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    TSM10N80CZC0 TSM10N80CIC0

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Part No. TSM10N80CZC0 TSM10N80CIC0
OCR Text ...recovery dv/dt (note 3) dv/dt 4.5 v single pulse avalanche energy (note 2) e as 267 mj avalanche current (repetitive) (note 1) i ...800v n-channel power mosfet ...
Description 800V N-Channel Power MOSFET

File Size 476.30K  /  10 Page

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    TSM4N80CIC0 TSM4N80CZC0 TSM4N801310

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Part No. TSM4N80CIC0 TSM4N80CZC0 TSM4N801310
OCR Text ...d (a) 800 3 @ v gs =10v 4 general description the tsm4n80 n-channel enhancement mode power mosfet is produced by planar st...800v n-channel power mosfet ...
Description 800V N-Channel Power MOSFET

File Size 400.11K  /  10 Page

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MICROSEMI[Microsemi Corporation]
Part No. APTM120DU29TG
OCR Text ... Typ Max 0.16 150 125 100 4.7 160 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Ca...800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100...
Description Dual Common Source MOSFET Power Module

File Size 288.18K  /  6 Page

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ADPOW[Advanced Power Technology]
Part No. APTM120DU15
OCR Text ... 80 40 0 TJ=25C TJ=125C 0 1 2 3 4 5 6 TJ=-55C 7 8 9 6V 5.5V 5V 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Curren...800V RG=1.2 T J=125C L=100H Rise and Fall times vs Current 80 VDS=800V RG=1.2 T J=125C L=100H ...
Description Dual common source MOSFET Power Module

File Size 299.30K  /  6 Page

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MICROSEMI[Microsemi Corporation]
Part No. APTM120DU15G
OCR Text ...25 30 0 1 2 3 4 5 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current...800V RG=1.2 T J=125C L=100H Rise and Fall times vs Current 80 VDS=800V RG=1.2 T J=125C L=100H ...
Description Dual common source MOSFET Power Module

File Size 276.21K  /  7 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM120DSK57T3
OCR Text ... 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ;...800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive s...
Description 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Dual Buck chopper MOSFET Power Module

File Size 317.29K  /  6 Page

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    MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
Part No. APTM120DSK57T3G
OCR Text ... 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ;...800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive s...
Description Dual Buck chopper MOSFET Power Module

File Size 288.88K  /  6 Page

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ADPOW[Advanced Power Technology]
Part No. APTM120DDA57T3
OCR Text ...22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 3 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 1...800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive s...
Description Dual Boost chopper MOSFET Power Module

File Size 316.61K  /  6 Page

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MICROSEMI[Microsemi Corporation]
Part No. APTM120DDA57T3G
OCR Text ...22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 3 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 1...800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive s...
Description Dual Boost chopper MOSFET Power Module

File Size 288.21K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM120DA29T
OCR Text ...in Typ Max 0.16 0.9 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz T...800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100...
Description Boost chopper MOSFET Power Module

File Size 308.99K  /  6 Page

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