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  319.50 Datasheet PDF File

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    ST3232E ST3232EBD ST3232EBDR ST3232EBN ST3232EBPR ST3232EBTR ST3232EBW ST3232EBWR ST3232ECD ST3232ECDR ST3232ECN ST3232E

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. ST3232E ST3232EBD ST3232EBDR ST3232EBN ST3232EBPR ST3232EBTR ST3232EBW ST3232EBWR ST3232ECD ST3232ECDR ST3232ECN ST3232ECPR ST3232ECTR ST3232ECW ST3232ECWR ST3232EC ST3232EB
OCR Text ...0.882 0.262 0.414 0.090 0.161 0.319 MIN. TYP. MAX. 12.992 0.519 inch 12/16 ST3232E Tape & Reel SO-16L MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 10.8 10.7 2.9 3.9 11.9 12.8 20.2 60 22.4 11.0 10.9 3.1 4.1 12.1 0.425 0.42...
Description 15KV ESD PROTECTED, 3 TO 5.5 V LOW POWER UP TO 250KBPS, RS232 DRIVERS AND RECEIVERS
【15KV ESD-PROTECTED, 3 TO 5.5V, LOW POWER, UP TO 250KBPS, RS-232 DRIVERS AND RECEIVERS
±15KV ESD-PROTECTED, 3 TO 5.5V, LOW POWER, UP TO 250KBPS, RS-232 DRIVERS AND RECEIVERS

File Size 424.64K  /  16 Page

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    ST75C176 ST75C176BD ST75C176BDR ST75C176BN ST75C176CD ST75C176CDR ST75C176CN ST75C176B ST75C176C

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. ST75C176 ST75C176BD ST75C176BDR ST75C176BN ST75C176CD ST75C176CDR ST75C176CN ST75C176B ST75C176C
OCR Text ...2 60 22.4 8.5 5.9 2.3 4.1 8.1 0.319 0.216 0.082 0.153 0.311 TYP MAX. 330 13.2 0.504 0.795 2.362 0.882 0.335 0.232 0.090 0.161 0.319 MIN. TYP. MAX. 12.992 0.519 inch 12/13 ST75C176 Information furnished is believed to be accurate an...
Description LOW POWER RS-485/RS-422 TRANSCEIVER 低功RS-485/RS-422收发
LOW POWER RS784/RS422 TRANSCEIVER

File Size 299.76K  /  13 Page

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    STD5NM50 STD5NM50-1

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STD5NM50 STD5NM50-1
OCR Text ...0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 9/10 STD5NM50/STD5NM50-1 Information furnished is believed to be accurate and reliable. However, ST...
Description N-CHANNEL 500V - 0.7 OHM - 7.5A DPAK/IPAK MDMESH POWER MOSFET
N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmeshPower MOSFET
N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh⑩Power MOSFET
N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh?Power MOSFET

File Size 462.20K  /  10 Page

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    STD5NM60-1 STP8NM60FP STD5NM60 STP8NM60

STMICROELECTRONICS[STMicroelectronics]
Part No. STD5NM60-1 STP8NM60FP STD5NM60 STP8NM60
OCR Text ...0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 * on sales type STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelec...
Description N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh?/a> Power MOSFET
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh⑩ Power MOSFET

File Size 601.81K  /  13 Page

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    2SC5184 2SC5184-T1 2SC5184-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5184 2SC5184-T1 2SC5184-T2
OCR Text ...0.375 0.361 0.348 0.338 0.329 0.319 S22 ANG -10.7 -20.4 -28.1 -34.6 -39.7 -43.1 -46.8 -49.0 -51.3 -52.9 -54.4 -55.6 -57.2 -58.2 -59.6 -60.2 ...50 FREQUENCY MHz 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1...
Description NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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    A3121UA A3121LUA A3121EU A3123LUA 3122 3121 A3123UA 3123 A3121ELT A3121EUA A3121LLT A3121LT A3121LU A3121U A3122ELT A312

ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
Part No. A3121UA A3121LUA A3121EU A3123LUA 3122 3121 A3123UA 3123 A3121ELT A3121EUA A3121LLT A3121LT A3121LU A3121U A3122ELT A3122EU A3122EUA A3122LLT A3122LT A3122LU A3122LUA A3122U A3122UA A3123ELT A3123EU A3123EUA A3123LLT A3123LT A3123LU A3123U
OCR Text ...79; 5,517,112; 5,619,137; 5,621,319; 5,650,719; 5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending. Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications ...
Description    HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Hall Effect switch For High-Temperature Operation(工作于高温的霍尔效应开
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应开关高温作
Audio CODEC IC; IC Function:Audio Codec; Package/Case:28-SSOP; Interface Type:Serial; Leaded Process Compatible:No; No. of Bits:24; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 霍尔效应开关高温作
KPT 18C 18#20 PIN PLUG 霍尔效应开关高温作

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    BFR181W Q62702-F1491

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181W Q62702-F1491
OCR Text ... 0.69278 2.2171 0.43619 0.12571 319.69 0.75 1.11 300 fA fA mA V fF V eV K 0.082903 - All parameters are ready to use, no scalling ...50) f = Parameter 20 I =5mA C dB 0.9GHz VCE = Parameter, f = 900MHz 22 dBm 18 5V 3V 8V G ...
Description NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system

File Size 56.17K  /  7 Page

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    BFR181 Q62702-F1314

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181 Q62702-F1314
OCR Text ... 0.69278 2.2171 0.43619 0.12571 319.69 0.75 1.11 300 fA fA mA V fF V eV K 0.082903 - All parameters are ready to use, no scalling ...50) f = Parameter 20 VCE = Parameter, f = 900MHz 24 dBm 8V IC=5mA 0.9GHz dB 20 ...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

File Size 57.16K  /  7 Page

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    HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B
OCR Text ...0.882 0.260 0.362 0.090 0.161 0.319 MIN. TYP. MAX. 12.992 0.519 inch 7/8 HCF4001B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of s...
Description RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE

File Size 108.88K  /  8 Page

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    HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10
OCR Text ... Dout Zo=50 RL=50 30 pF 319 Dout 353 5 pF Output load (A) Output load (B) (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW) Read Cycle HM62W8511HC -10 Parameter Read cycle time Address access time Chip select access time Output ...
Description 4M High Speed SRAM (512-kword x 8-bit)

File Size 64.72K  /  14 Page

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