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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6204
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| OCR Text |
...t a =25c unless otherwise noted 30v avalanche energy l=0.1mh c mj avalanche current c 11 continuous drain current 22 14 a 21 a t a =25c i ...20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching par... |
| Description |
30v N-Channel MOSFET
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| File Size |
498.52K /
6 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6202
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| OCR Text |
30v n-channel mosfet v ds i d (at v gs =10v) 24a r ds(on) (at v gs =10v) < 5.5m w r ds(on) (at v gs = 4.5v) < 7.5m w symbol v ...20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching par... |
| Description |
30v N-Channel MOSFET
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| File Size |
388.28K /
6 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6200L
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| OCR Text |
30v n-channel mosfet v ds i d (at v gs =10v) 24a r ds(on) (at v gs =10v) < 7. 8m ? r ds(on) (at v gs = 4.5v) < 11m ? 100% u...20a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-... |
| Description |
30v N-Channel MOSFET
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| File Size |
720.01K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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| Part No. |
HUFA76413D3 HUFA76413D3S HUFA76413D3ST
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| OCR Text |
...= 0V to 5V VGS = 0V to 1V VDD = 30v, ID = 15A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30v, ID = 20a VGS = 10V, RGS = 18 (Figures 16, 21, 22) VDD = 30v, ID = 15A VGS = 4.5V, RGS = 16 (Figures 15, 21, 22) 10 172 21 55 273 114 ns ns ns ns ... |
| Description |
20a, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs 20a/ 60V/ 0.056 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs 20a, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 20 A, 60 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
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| File Size |
202.59K /
10 Page |
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Advanced Power Electronics
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| Part No. |
AP95T06GS-HF-3
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| OCR Text |
...5a. 4.starting t j =25c , v dd =30v , l=1mh , r g =25 w , ias=30a. 5.surface-mounted on 1 in 2 copper pad of fr4 board source-drain diode...20a - - 12 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward trans... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
105.84K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6407
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| OCR Text |
30v p-channel mosfet v ds i d (at v gs = -10v) -85a r ds(on) (at v gs = -10v) < 4.5m w r ds(on) (at v gs = -6v) < 6.0m w symbo...20a gate source charge gate drain charge m w diode forward voltage maximum body-diode continuous cur... |
| Description |
30v P-Channel MOSFET
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| File Size |
295.56K /
6 Page |
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SeCoS Halbleitertechnol...
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| Part No. |
SSQ105N60SG
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| OCR Text |
... - 7.5 - nc i d =20a v dd =30v v gs =10v turn-on delay time t d(on) - 11 - rise time t r - 7 - turn-off delay time t d(off) - 35 - fall time t f - 10 - ns v dd =30v i d =20a v gs =10v r g =109 input cap... |
| Description |
N-Ch Enhancement Mode Power MOSFET
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| File Size |
438.24K /
4 Page |
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Cystech Electonics Corp...
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| Part No. |
MTB020N6KE3-0-UB-X
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| OCR Text |
... v dd =30v (note 4) e as 162 repetitive avalanche energy ...20a *r ds(on) - 17.8 25 m v gs =4.5v, i d =15a dynamic *qg - 18.3 - *qgs - 2.1 -... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
349.34K /
8 Page |
View
it Online |
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