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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120SK15G
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| OCR Text |
... 125C
Typ
VGS = 10V, ID = 30a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
150 3
Max 500 3000 175 5 250
Unit A m V nA
Dynamic...1200
Typ
Max 250 750
Unit V A A
IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt = 2... |
| Description |
Buck chopper MOSFET Power Module
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| File Size |
268.63K /
6 Page |
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IXYS
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| Part No. |
DSEL30
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| OCR Text |
...0 30 40 50 60 t vj =125 c i f =30a di f /dt t fr v fr t fr ns 0 200 400 600 800 1000 1200 v v fr 0 200 400 600 0.0 0.2 0.4 0.6 0.8 1.0 -di f /dt t rr typ. max. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f q r i rm c t j 0 200 400... |
| Description |
Fast Recovery Epitaxial Diode
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| File Size |
63.41K /
2 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9K30120 ISL9K30120G3
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| OCR Text |
30a, 1200V StealthTM Dual Diode
General Description
The ISL9K30120G3 is a StealthTM dual diode optimized for low loss performance in high ...1200 1200 1200 30 60 70 325 166 20 -55 to 150 300 260 Units V V V A A A A W mJ C C C
CAUTION: Str... |
| Description |
30a, 1200V Stealth?/a> Dual Diode
30a, 1200V Stealth⑩ Dual Diode
30a, 1200V Stealth Dual Diode
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| File Size |
116.05K /
6 Page |
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it Online |
Download Datasheet |
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http://
ADPOW[Advanced Power Technology]
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| Part No. |
APTM120DU15
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| OCR Text |
...t V A m V nA
VGS = 10V, ID = 30a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs ...1200 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
1000
... |
| Description |
Dual common source MOSFET Power Module
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| File Size |
299.30K /
6 Page |
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it Online |
Download Datasheet |
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http://
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120DA15G
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| OCR Text |
... 125C
Typ
VGS = 10V, ID = 30a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
150 3
Max 500 3000 175 5 250
Unit A m V nA
Dynamic...1200
Typ
Max 250 750
Unit V A A
IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt = 2... |
| Description |
Boost chopper MOSFET Power Module
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| File Size |
267.96K /
6 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTGT35H120T3G
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| OCR Text |
...j = 25C Tj = 125C Tc = 70C IF = 30a IF = 60A IF = 30a Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 30a VR = 800V
di/dt =1000A/s
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current D... |
| Description |
Full - Bridge Fast Trench + Field Stop IGBT Power Module
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| File Size |
259.80K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTGF15H120T3G
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| OCR Text |
...rse Bias Safe Operating Area
30a@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Fol...1200 25 15 60 20 140
Unit V A V W
July, 2006
APTGF15H120T3G
All ratings @ Tj = 25C unless ot... |
| Description |
Full - Bridge NPT IGBT Power Module
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| File Size |
289.11K /
6 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC80A15SCTG
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| OCR Text |
...
Test Conditions VR=200V IF = 30a IF = 60A IF = 30a IF = 30a VR = 133V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max...1200 Typ 150 300 15 1.6 2.6 42 135 99 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.45 ... |
| Description |
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module
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| File Size |
308.29K /
7 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC80A10SCTG
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| OCR Text |
...
Test Conditions VR=200V IF = 30a IF = 60A IF = 30a IF = 30a VR = 133V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max...1200 Typ 200 400 20 1.6 2.6 56 180 132 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.3 ... |
| Description |
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
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| File Size |
307.29K /
7 Page |
View
it Online |
Download Datasheet |
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