3.900v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MA3X704A TLE4226G AP435LN 30070 3M016 51841 SW209B CDBV120
	Product Description
	Full Text Search

3.900v Datasheet PDF File

For 3.900v Found Datasheets File :: 1835 Search Time::1.609ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				Fuji Electric
Part No.	2MBI1200UG-170
OCR Text	...uivalent circuit MS5F5932 3 13 H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified ) Items Collector-...900V ton tr toff tf VF (main terminal) V nF Ic = 1200A VGE=15V,Tj=125C Rgon = 0.1 Rgoff = ...
Description	IGBT-Module
File Size	499.42K / 13 Page	View it Online	Download Datasheet

				Bruckewell Technology LTD
Part No.	MS14N60
OCR Text	...h, r g =25, starting tj=+25c. 3. i sd 7.5a, di/dt100a/s, vddbvdss, starting tj=+25c. thermal characteristics symbol parameter t...900v n - channel mosfet publication order number: [ ms 1 4 n 6 0 ] ...
Description	900V N-Channel MOSFET
File Size	358.47K / 4 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT27GA90BD15 APT27GA90SD15
OCR Text	... i c = 14a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i...
Description	IGBT w/ anti-parallel diode
File Size	226.56K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	6N90C
OCR Text	...* * * * * 6A, 900V, RDS(on) = 2.3 @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 (R) Description These N-Channel enhancement mode po...
Description	Search --To FQA6N90C
File Size	815.64K / 9 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2769-01MR
OCR Text	...channel MOS-FET 900V 5,5 3,5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unl...
Description	N-channel MOS-FET
File Size	279.53K / 2 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	FF600R16KF4
OCR Text	...200 A 3900 W 20 V 600 A 1200 A 3,4 kV min. iC=600A, vGE=15V, t vj=125C iC=40mA, vCE=vGE, tvj=25C fO=1MHz,tvj=25C,vCE=25V, v GE=0V vCE=1600V...900V,v L=15V iC=600A, vGE=15V, t vj=25C vCE sat vGE(TO) 4,5 tf typ. 3,5 4,6 5,5 90 4 40 0,8 1 1,1 1,...
Description	Maximum rated values / Electrical properties
File Size	170.24K / 5 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN
OCR Text	...ML1001R3AN / SML901R3AN 4 1.1 1.3 Min. 1000 900 250 1000 100 Typ. Max. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Thresh...900V 1000V 900V 9.5A 9.5A 8.5A 8.5A W 1.10W W 1.10W W 1.30W W 1.30W Test Conditions. VGS = 0V...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
File Size	60.52K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4631LS
OCR Text	...t : mm 2079D [2SC4631LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=5.0pF). Full-isolation package. High reliability(Adoption of HVP process). 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 ...
Description	NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications 900V/300mA High-Voltage Amplifier,High-Voltage Switching Applications
File Size	28.26K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PF50W
OCR Text	... VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -13 gfe Forward Transconductance 26 39 --- -...900V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5.0 mA VGE = 0V, VCE = 900V, TJ = 150C 100 nA VGE = 20V ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	125.36K / 8 Page	View it Online	Download Datasheet

				Eupec
Part No.	BSM200GB170DLC
OCR Text	...= 50 Hz, t = 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sat...900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Anstiegszeit (induktive Last) ...
Description	IC,BUFFER/DRIVER,DUAL,4-BIT,HC-CMOS,SOP,20PIN,PLASTIC
File Size	140.19K / 8 Page	View it Online	Download Datasheet

For 3.900v Found Datasheets File :: 1835 Search Time::1.609ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |