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  3.7a Datasheet PDF File

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    FDB2552F085 FDB2552-F085

Fairchild Semiconductor
Part No. FDB2552F085 FDB2552-F085
OCR Text 37a, 36m ? features ?r ds(on) = 32m ? (typ.), v gs = 10v, i d = 16a q g (tot) = 39nc (typ.), v gs = 10v  low miller charge low q rr body diode  uis capability (single pulse and repetitive pulse)  qualified to aec q101 applicatio...
Description N-Channel PowerTrench? MOSFET 150V, 37A, 36mΩ

File Size 415.70K  /  11 Page

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    ZVP3306A

Zetex Semiconductors
Part No. ZVP3306A
OCR Text ... l tag e v gs ( t h ) i d= 0.37a 0-2 -4 -6 -8 -10 -1.0 -0.8 -0.6 -0.4 0 -0.2 0 -10 -20 -30 -40 -50 saturation characteristics on-resistance vs drain current i d- drain current (ma) -6 0 -2 -4 -8 0-2 -4 -6 -8-10 -10 v ds- drain ...
Description P-channel MOSFET

File Size 119.84K  /  3 Page

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    RSP-10001112

Mean Well Enterprises Co., Ltd.
Part No. RSP-10001112
OCR Text ...a 750w 24v 40a 0 ~ 40a 960w 27v 37a 0 ~ 37a 999w 48v 21a 0 ~ 21a 1008w rsp-1000-12 rsp-1000-15 rsp-1000-24 rsp-1000-27 rsp-100 0-48 1. all parameters not specially mentioned are measured at 230vac input, r ated load and 25 of ambient temper...
Description 1000W Single Output Power Supply

File Size 306.67K  /  6 Page

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    RSP-100011

Mean Well Enterprises Co., Ltd.
Part No. RSP-100011
OCR Text ...a 750w 24v 40a 0 ~ 40a 960w 27v 37a 0 ~ 37a 999w 48v 21a 0 ~ 21a 1008w rsp-1000-12 rsp-1000-15 rsp-1000-24 rsp-1000-27 rsp-100 0-48 1. all parameters not specially mentioned are measured at 230vac input, r ated load and 25 of ambient temper...
Description 1000W Single Output Power Supply

File Size 292.08K  /  6 Page

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    SML40B37

SemeLAB
Seme LAB
Part No. SML40B37
OCR Text ....040) 1.40 (0.055) VDSS 400V 37A ID(cont) W RDS(on) 0.120W * * * * Faster Switching Lower Leakage 100% Avalanche Tested Popular TO-247 Package 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0....
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.13K  /  2 Page

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text 37A 0.140 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R...
Description POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.64K  /  4 Page

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2VR
OCR Text 37A 0.140 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm

File Size 61.78K  /  4 Page

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text 37A 0.140W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Low...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 34.16K  /  2 Page

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    IXTQ74N20P IXTT74N20P

IXYS Corporation
Part No. IXTQ74N20P IXTT74N20P
OCR Text ... normalized i d = 74a i d = 37a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 ...
Description PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

File Size 162.21K  /  5 Page

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    BS250FTA

Diodes Incorporated
Part No. BS250FTA
OCR Text ... l tag e v gs ( t h ) i d= 0.37a 0-2 -4 -6 -8 -10 -1.0 -0.8 -0.6 -0.4 0 -0.2 0 -10 -20 -30 -40 -50 saturation characteristics on-resistance vs drain current i d- drain current (ma) -6 0 -2 -4 -8 0-2 -4 -6 -8-10 -10 v ds- drain ...
Description SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 80.29K  /  3 Page

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