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SamHop Microelectronics...
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| Part No. |
STUD36L01A
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| OCR Text |
...atings v gs =0v,i s =10a 0.79 1.3 v notes v ds =50v,i d =18a,v gs =10v a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) d.p... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
108.33K /
8 Page |
 View
it Online |
Download Datasheet
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SamHop Microelectronics...
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| Part No. |
STUD35L01A
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| OCR Text |
...ratings v gs =0v,i s =7a 0.78 1.3 v notes v ds =50v,i d =17a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =2... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
118.36K /
8 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD35L01HA
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| OCR Text |
...ratings v gs =0v,i s =5a 0.77 1.3 v notes v ds =50v,i d =17a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =2... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
108.96K /
8 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD35L01
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| OCR Text |
...9,2010 2 v sd nc q gs nc q gd 6.3 14 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =15a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =8a 0.79 1.3 v notes v ds =50v,i d =15a,v gs =... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
104.88K /
8 Page |
View
it Online |
Download Datasheet |
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