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  3-driver Datasheet PDF File

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...Units C/W www.irf.com 1 3/16/01 IRF1010E Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...x. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resist...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...x. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resist...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...-- --- --- --- 22 15 75 A 360 1.3 33 23 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS =...DRIVER 200 BOTTOM 31A 53A 75A ID RG VGS 20V D.U.T IAS tp + V - DD 150 A...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die cont...Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...- --- --- --- Typ. --- 0.021 3.3 --- --- --- --- --- --- 79 18 31 28 130 47 16 4.5 7.5 3600 2370 520 5710 2370 3540 Max. Units Conditi...DRIVER 560 BOTTOM + V - DD 420 A 0.01 280 Fig 12a. Unclamped Inductive Test ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...- --- --- --- Typ. --- 0.021 3.3 --- --- --- --- --- --- 79 18 31 28 130 47 16 4.5 7.5 3600 2370 520 5710 2370 3540 Max. Units Conditi...DRIVER 560 BOTTOM + V - DD 420 A 0.01 280 Fig 12a. Unclamped Inductive Test ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...r 10 seconds Max. 42 30 140 3.8 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Th...Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die conta...Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ...10 seconds Max. 162 115 650 3.8 200 1.3 20 519 95 20 5.0 -55 to +175 -55 to +175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V...Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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