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BCD SEMICONDUCTOR MANUFACTURING LTD
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| Part No. |
AP3008KTR-E1
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| OCR Text |
... ma switch vcesat v cesat i sw =250ma 350 mv switch leakage current v sw =5v 0.01 5 a shdn vo l t a g e v th high 1.5 v v tl low 0.4 shdn ...ch aracteristics (continued) figure 8. efficiency vs. junction temperature figure 9. switch current... |
| Description |
WHITE LED DRIVER
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| File Size |
124.92K /
10 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
MC830
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| OCR Text |
...l d voltage (v) vds = vgs id = -250ma typical electrical characteristics (n-channel) normalized thermal transien t junction to ambient single pulse power, junction-to-ambient vth gate to source voltage vs temperature source-dr... |
| Description |
Dual N-channel Logical Level MOSFET
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| File Size |
353.19K /
5 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
MCD410 AOD410
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| OCR Text |
...ol d voltage (v) vds = vgs id = 250ma 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd, body diode forward voltage (v) is, reverse drain current (a ) ta = 125 o c 25 o c vgs = 0v 0 0.02 0.04 0.06 0.08 0.1 246810 v gs , gate to... |
| Description |
N-channel 30-V (D-S) MOSFET High performance trench technology
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| File Size |
393.55K /
5 Page |
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it Online |
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