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InternationalRectifier
IRF[International Rectifier]
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| Part No. |
20CJQ060 INTERNATIONALRECTIFIER-20CJQ060
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| OCR Text |
... pulse T J = 25C, IAS =1.0A, L =20mh Following any rated load condition and with rated VRRM applied.
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (Per Leg) See Fig. 1
20CJQ Units
0.59 0.75 0.56 0.67 V V V V mA... |
| Description |
SCHOTTKYRECTIFIER/2Amp
SCHOTTKY RECTIFIER, 2 Amp
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| File Size |
147.11K /
4 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75L2FLL_04 APT60M75L2FLL APT60M75L2FLL04
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| OCR Text |
...
4 Starting Tj = +25C, L = 1.20mh, RG = 25, Peak IL = 73A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID73A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See fi... |
| Description |
POWER MOS 7 R FREDFET
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| File Size |
152.48K /
5 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75L2FLL
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| OCR Text |
...3471 4 Starting T = +25C, L = 1.20mh, R = 25W, Peak I = 73A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ]
1 Repetitive Rating: Pulse wi... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
52.76K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75L2LL_04 APT60M75L2LL APT60M75L2LL04
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| OCR Text |
...
4 Starting Tj = +25C, L = 1.20mh, RG = 25, Peak IL = 73A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID73A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See fi... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
151.76K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60M75L2LL
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| OCR Text |
...3471 4 Starting T = +25C, L = 1.20mh, R = 25W, Peak I = 73A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C
APT Reserves the right to change... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
51.60K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FFA60UP30DN
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| OCR Text |
...J
*
Avalanche Energy (L = 20mh)
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
FFA60UP30DN Rev. A
2
www.fairchildsemi.com
FFA60UP30DN Ultrafast Recovery Power Rectifier
Typical Performance Characteristics
Figure 1. T... |
| Description |
Ultrafast Recovery Power Rectifier
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| File Size |
121.29K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FFB10UP20S
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| OCR Text |
...J
*
Avalanche Energy (L = 20mh)
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
FFB10UP20S Rev. A
2
www.fairchildsemi.com
FFB10UP20S Ultrafast Recovery Power Rectifier
Typical Performance Characteristics
Figure 1. Typ... |
| Description |
Ultrafast Recovery Power Rectifier
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| File Size |
114.04K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FFP12UP20DN F12UP20DN
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| OCR Text |
...J
*
Avalanche Energy (L = 20mh)
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
Test Circuit and Waveforms
FFP12UP20DN Rev. A
2
www.fairchildsemi.com
FFP12UP20DN Ultrafast Recovery Power Rectifier
Typical Performanc... |
| Description |
Ultrafast Recovery Power Rectifier
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| File Size |
146.80K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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