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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4D553238F K4D553238F-GC
OCR Text	...nd to reset DLL. The additional 200 clock cycles are required to lock the DLL. *1,2 7. Issue precharge command for all banks of the device. ...column address) uses A4 ~ A6. A7 is used for test mode. A8 is used for DLL reset. A7,A8, BA0 and BA1...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	307.09K / 17 Page	View it Online	Download Datasheet

				http:// HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text	...lize Initialization sequence 200 s Absolute Maximum Ratings Parameter Voltage on any pin relative to V SS Supply voltage relative to ...column command (same bank) Precharge to active command period Write recovery or data-in to precharge...
Description	256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM
File Size	76.58K / 16 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM658512A HM658512ALFP-10 HM658512ALFP-10V HM658512ALFP-7 HM658512ALFP-7V HM658512ALFP-8 HM658512ALFP-8V HM658512ALP-10 HM658512ALP-10V HM658512ALP-7 HM658512ALP-7V HM658512ALP-8 HM658512ALP-8V HM658512ALRR-10 HM658512ALRR-10V HM658512ALRR-7 HM658512ALRR-7V HM658512ALRR-8 HM658512ALRR-8V HM658512ALTT-10 HM658512ALTT-10V HM658512ALTT-7 HM658512ALTT-7V HM658512ALTT-8 HM658512ALTT-8V
OCR Text	... Active: 250 mW (typ) Standby: 200 W (typ) * Directly TTL compatible All inputs and outputs * Simple address configuration Non multiplexed ...Column I/O Column Decoder Address Latch Control I/O 0 I/O 7 Input Data Control A11 A18 ...
Description	4 M PSRAM (512-kword x 8-bit) 2 k Refresh
File Size	96.69K / 22 Page	View it Online	Download Datasheet

				ICSI
Part No.	IC42S16102
OCR Text	... bus loading ? clock frequency: 200, 166, 143 mhz ? fully synchronous; all signals referenced to a positive clock edge ? two banks can be op...column address every clock cycle ? programmable cas latency (2, 3 clocks) ? burst read/write and b...
Description	DYNAMIC RAM, SDRAM
File Size	769.36K / 78 Page	View it Online	Download Datasheet

				TDK Semiconductor Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	75T204-IP 75T204-IL 75T204
OCR Text	...5 7 4.2 NOM MAX 20 20 46 50 5.0 200 200 200 200 UNITS ms ms ms ms ms ms s ms ns ns ns ns 5 75T204 5V Low-Power Subscriber DTMF Receiver APPLICATION INFORMATION The 75T204 will tolerate total input RMS noise up to 12dB below the lowes...
Description	5V Low-Power Subscriber DTMF Receiver 5V的低功耗用户的DTMF接收
File Size	63.03K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NOIL1SM4000A NOIL1SM4000A-GDC
OCR Text	...dout possible power dissipation 200 mw package type 127 pga electro ? optical specifications parameter typical specifications frame rate 15 ...column readout module supply ?1% 3.3 +1% v ia3 column readout module current ? 10 50 ma vmem_l power...
Description	LUPA4000: 4 MegaPixel High Speed CMOS Sensor
File Size	525.85K / 30 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 4.0 5.0 5.0 6.5 Unit pF pF pF pF Note 1 2 2 3 ...column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. ...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 3.5 3.8 3.8 6.0 Unit pF pF pF pF Note RAS, ...column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. ...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text	...A = 23C, f = 1MHz, VREF = 1.4V 200 mV) Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4 Max 4 5 5 6.5 Unit pF pF pF pF Parameter RAS, CAS,...column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. ...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
File Size	124.69K / 10 Page	View it Online	Download Datasheet

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