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AGILENT TECHNOLOGIES INC
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| Part No. |
AMMC-6420-W50
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| OCR Text |
...when handling these devices
2 ammc-6420 dc specifications/physical properties [1] notes: 1. ambient operational temperature t a =25c un...45 p -1db output power at 1db gain compression dbm 27 29 0.27 p -3db output power at 3db gain compre... |
| Description |
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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| File Size |
360.94K /
8 Page |
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it Online |
Download Datasheet
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AVAGO
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| Part No. |
ACPM-7357
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| OCR Text |
...h ou t pu t ma t ch v cc 1 v cc 2 v mode v bp v en _l b v en _h b i npu t ma t ch & po w er divider i npu t ma t ch & po w er divide...45 -40 -35 -30 -5 0 5 10 15 2 0 2 530 pout (dbm) ac lr 1 (dbc) 0 5 10 15 2 0 2 5 30 35 40 45 50 -5 0... |
| Description |
Power Amplifier Module
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| File Size |
367.83K /
19 Page |
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it Online |
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Renesas
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| Part No. |
2SK1957
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| OCR Text |
...y Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-par...45 20 45 50 35 1.1 150 Max -- -- 10 250 4.0 0.45 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns n... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
76.67K /
12 Page |
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it Online |
Download Datasheet
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Renesas Technology
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| Part No. |
RJK03E4DPA
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| OCR Text |
2.10 page 1 of 6 may 20, 2010 preliminary datasheet rjk03e4dpa silicon n channel power mos fet with schottky barrier diode powe...45 a drain peak current i d(pulse) note1 180 a body-drain diode reverse drain current i dr 4... |
| Description |
Silicon N channel Power MOS FET
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| File Size |
129.06K /
7 Page |
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it Online |
Download Datasheet
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Renesas
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| Part No. |
2SK2737
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| OCR Text |
...y Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-par...45 180 45 30 150 -55 to +150
Unit V V A A A W C C
Electrical characteristics (Ta = 25C)
Item ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
76.19K /
12 Page |
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it Online |
Download Datasheet
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