19 10 1998 pdf Datasheet P12 Full Text Search --- IC-ON-LINE

19 10 1998 Datasheet PDF File

For 19 10 1998 Found Datasheets File :: 8485 Search Time::2ms
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				Mitsubishi Electric Corporation
Part No.	PM150CVA120
OCR Text	...o 15. vnc 16. vn1 17. un 18. vn 19. wn s nuts (5 typ.) t (4 typ.) d a b k e 1234 5678 9101112 13 14 15 16 17 18 19 np uvw j typ. n v u r p u...10 m s over temperature protection ot trip level 100 110 120 c (v d = 15v, lower arm) ot r reset ...
Description	MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	69.38K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7575-55 BUK7524-55
OCR Text	...e resistance VGS = 10 V MAX. 55 19.7 61 175 75 UNIT V A W C m PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance wi...
Description	TrenchMOS transistor Standard level FET
File Size	63.70K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7675-55
OCR Text	...e resistance VGS = 10 V MAX. 55 19.7 61 175 75 UNIT V A W C m PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance wit...
Description	TrenchMOS transistor Standard level FET
File Size	51.46K / 8 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electro... NXP Semiconductors
Part No.	BFG92AX_4 BFG92AX BFG92A98 BFG92AX-15 BFG92AX-2015
OCR Text	....2 OPT F min = 2.1 dB 0 MSG 0.2 19.9 dB 0.5 1 2 2.5 dB 0.2 3 dB 4 dB 5 10 5 10 +j * 10 5 -j 0.5 1 Zo = 50 . Maximum stable gain = 19.9 dB. 2 MCD084 Fig.13 Common emitter noise figure circles; typical values. ...
Description	NPN 5 GHz wideband transistor From old datasheet system
File Size	104.53K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BFG410W_4 BFG410W135 BFG410W115
OCR Text	... 8 9 10 11 12 13 14 15 16 17 18 19 (1) 20 22 23 24 25 26 27 28 29 30 31 32 33 34 (1) 35 (1) (1) BFG410W PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ...
Description	From old datasheet system
File Size	80.80K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9675-55
OCR Text	...te resistance VGS = 5 V MAX. 55 19.7 61 175 75 UNIT V A W C m PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN C...10 19.7 13.9 79 61 175 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic...
Description	TrenchMOS transistor Logic level FET TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
File Size	68.18K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK9775-55 BUK9775-56
OCR Text	...sistance VGS = 5 V MAX. 55 11.7 19 150 75 UNIT V A W C m PINNING - SOT186A PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION ...10 11.7 7.4 47 19 150 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic ...
Description	TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS（商标）场效应晶体管逻辑电平TrenchMOS（商标）晶体管逻辑电平场效应管 TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	67.63K / 8 Page	View it Online	Download Datasheet

For 19 10 1998 Found Datasheets File :: 8485 Search Time::2ms
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