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  18.881 Datasheet PDF File

For 18.881 Found Datasheets File :: 2006    Search Time::6.313ms    
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    IXYS[IXYS Corporation]
ETC[ETC]
Part No. IXTH6N80 IXTM6N80 6N80 IXTM6N80A IXTH6N80A
OCR Text ...e 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ...881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,...
Description    N-Channel Enhancement Mode
32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Number of I/O Pins:24; ADC Channels:5; Number of Timers 8/12/16/32 Bits:0 / 0 / 2 / 1; Number of PWM Channels:1; Clock Speed:200MHz; Interfaces:AC97, I2S, SPI, UART, USB

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    IXTM10N100 IXTM12N100

IXYS, Corp.
IXYS Corporation
Part No. IXTM10N100 IXTM12N100
OCR Text ...e 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysi...881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,...
Description MegaMOS FET 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IXTM11N80

IXYS Corporation
Part No. IXTM11N80
OCR Text ...e 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from...881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,...
Description MegaMOSFET

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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXTM6N90 IXTH6N90 IXTH6N90A IXTM6N90A IZTH6N90
OCR Text ...e 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ...881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,...
Description Discrete MOSFETs: Standard N-channel Types
Standard Power MOSFET 标准功率MOSFET

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    PHILIPS[Philips Semiconductors]
Part No. SA631DK SA631
OCR Text ...7 8 9 20 MIXER OUT 19 MIXER OUT 18 GND 17 MIXER IN 16 GND 15 LNA IN 14 GND 13 LNA OUT 12 VCC 11 GND FEATURES * Low current consumption...881 MHz With ext. impedance matching 800 15 -28 0.006 0.013 -28 -10 -10 -20 -7 1.7 120 0.3 1000 MHz ...
Description 1GHz low voltage LNA and mixer
From old datasheet system

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    STD20N20 STD20N20T4 STP20N20 STF20N20

STMicroelectronics
ST Microelectronics
Part No. STD20N20 STD20N20T4 STP20N20 STF20N20
OCR Text ... s s s Figure 1: Package Id 18 A 18 A 18 A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS 200 V 200 V 200 V RDS(on) < 0.125 < 0.125 < 0....881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 ...
Description N-CHANNEL POWER MOSFET
From old datasheet system
N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET
N-CHANNEL 200V 0.10 Ohm 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STRIPFET II MOSFET

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    2SC5503

Sanyo Semicon Device
Part No. 2SC5503
OCR Text ...170.2 162.3 154.2 146.7 | S21 | 18.245 15.211 10.170 7.289 5.621 4.530 3.855 3.306 2.928 2.637 2.380 S21 149.0 128.7 104.5 90.5 81.3 73.4 6...881 0.806 0.638 0.521 0.436 0.381 0.357 0.338 0.335 0.316 0.316 S11 -21.7 -40.6 -76.7 -102.7 -124.9...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

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    CONSUMER MICROCIRCUITS LIMITED
CMLMICRO
Part No. CMX881 CMX881D6 CMX881E1
OCR Text .................................. 18 DCS Modulation Modes........................................................................................881/7 PMR Signalling Processor CMX881 Figure 15 Typical FFSK/MSK Bit Error Rate Graph.........
Description Baseband processor for PMR and trunked radios.

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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXFH52N30Q IXFK52N30Q IXFT52N30Q
OCR Text ... 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .0...881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,...
Description    N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268

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    IXGH17N100AU1 IXGH17N100U1

IXYS[IXYS Corporation]
Part No. IXGH17N100AU1 IXGH17N100U1
OCR Text ...d) min. typ. max. 2.5 16 120 35 18 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF ...881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 ...
Description Low VCE(sat) IGBT with Diode High speed IGBT with Diode

File Size 110.86K  /  6 Page

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