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  160m Datasheet PDF File

For 160m Found Datasheets File :: 221    Search Time::0.891ms    
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    Sanyo Semiconductor
Part No. 2SD1047P
OCR Text ...- A --8 --2 4 --20 A --160m A 0mA 8 7 6 5 4 3 2 1 0m 9 200mA 160mA A 2SD1047P 120m A 80mA --120mA --80mA 40mA 20mA --40mA --20mA --2 --1 0 0 --5 --10 --15 --20 --25 --30 IB=0 --35 -...
Description General-Purpose Amplifier Transistors

File Size 62.74K  /  4 Page

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    IRFPS30N60K

International Rectifier
Part No. IRFPS30N60K
OCR Text ... VDSS 600V RDS(on) typ. 160m ID 30A Super-247TM Max. 30 19 120 450 3.6 30 13 -55 to + 150 300 Units A W W/C V V/ns C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Av...
Description SMPS MOSFET

File Size 133.64K  /  8 Page

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    IRFPS30N60KPBF

IRF
International Rectifier
Part No. IRFPS30N60KPBF
OCR Text ... VDSS 600V RDS(on) typ. 160m ID 30A Super-247TM Max. 30 19 120 450 3.6 30 13 -55 to + 150 300 Units A W W/C V V/ns C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Av...
Description SMPS MOSFET

File Size 132.61K  /  8 Page

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    B966AS-3R9N DS106C2 B966AS-100M B966AS-160M B966AS-1R2N B966AS-1R8N B966AS-2R7N B966AS-4R7N B966AS-6R8N B966AS-8R2N B966

TOKO, Inc
Part No. B966AS-3R9N DS106C2 B966AS-100M B966AS-160m B966AS-1R2N B966AS-1R8N B966AS-2R7N B966AS-4R7N B966AS-6R8N B966AS-8R2N B966BS-101M B966BS-151M B966BS-220M B966BS-221M B966BS-330M B966BS-331M B966BS-470M B966BS-680M
OCR Text ...966AS-8R2N #B966AS-100M #B966AS-160m #B966BS-220M #B966BS-330M #B966BS-470M #B966BS-680M #B966BS-101M #B966BS-151M #B966BS-221M #B966BS-331M Inductance Decrease Current(3) (A) Max. L L =10% 12 9.8 8.1 7.1 6.1 5.2 4.8 4.4 3.3 2.7 2.1 1.8 1.4...
Description Fixed Inductors for Surface Mounting

File Size 92.54K  /  1 Page

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    AO3700

Alpha & Omega Semiconductors
Part No. AO3700
OCR Text ...N) < 75m (VGS = 4.5V) RDS(ON) < 160m (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A SOT-23-5 Top View G S A 1 2 3 5 4 D K G D K S A Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS ...
Description N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 117.82K  /  5 Page

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    Yaesu
Part No. FT-1000MP
OCR Text ...ng Protects Receiver Front End (160m ~ 20M) often created in an HF receiver. Tuning of the VRF is incredibly simple: just turn the VRF/MEM CH knob, and peak the background noise or signal strength! The VRF is stoutly designed, with large (...
Description Mark-V Transceiver

File Size 1,009.89K  /  8 Page

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    Xicon Passive Components
Part No. 422-3306
OCR Text ...00V * Output: 6000V * DCR (N1): 160m max. * DCR (N2): 180 20% * Wire (N1): polyurethane enameled copper wire; .25mm (2UEW) 11 1/2 TS * Wire (N2): polyurethane enameled copper wire; .06mm (USTC) 800TS * Bobbin: phenolic molding powder 6.5x8x...
Description
File Size 104.81K  /  1 Page

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    Xicon Passive Components
Part No. 422-1304
OCR Text ...utput voltage: 4000 * DCR (N1): 160m max. * DCR (N2): 115 max. * Wire (N1): polyurethane enameled copper wire; .23 m/m (2UEW) 11 1/2 TS * Wire (N2): polyurethane enameled copper wire; .06 m/m (USTC) 500TS * Core: ferrite core GC1 DRWW 3x12 ...
Description
File Size 15.48K  /  1 Page

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    AO3422 AO3422L

http://
Alpha & Omega Semiconductors
Part No. AO3422 AO3422L
OCR Text ...D = 2.1A (VGS = 4.5V) RDS(ON) < 160m (VGS = 4.5V) RDS(ON) < 200m (VGS = 2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 128.12K  /  4 Page

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