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  160-channel Datasheet PDF File

For 160-channel Found Datasheets File :: 31976    Search Time::1.469ms    
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    RQA0009SXAQS11

Renesas Electronics Corporation
Part No. RQA0009SXAQS11
OCR Text ...uency f (mhz) pg pae 170 130 160 180 150 130 140 160 170 180 v ds = 3.6v i dq = 200 ma p in = +20dbm pout id v ds = 3.6v i dq = 200 ma p in = +20dbm rqa0009sxaqs preliminary r07ds0493ej0200 rev.2.00 page 5 of 21 jun 29,...
Description Silicon N-Channel MOS FET

File Size 215.93K  /  22 Page

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    TOSHIBA
Part No. 2SK4107
OCR Text ...0.2 0.6 0.4 0.8 ? 80 ? 40 160 0 80 120 40 0.1 100 10 1 ? 0.2 0 ? 1.2 ? 0.4 ? 0.8 ? 1.0 ? 0.6 10 10000 100 1000 0.1 1 100 10 ...channel temperature (initial) t ch (c) avalanche energy e as (mj) i d max (pulse) * i ...
Description Power MOSFET (N-ch 250V<VDSS≤500V)

File Size 253.23K  /  6 Page

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    RQA0009TXDQS11

Renesas Electronics Corporation
Part No. RQA0009TXDQS11
OCR Text ...uency f (mhz) pg pae 170 130 160 180 150 130 140 160 170 180 v ds = 3.6v i dq = 200 ma p in = +20dbm pout id v ds = 3.6v i dq = 200 ma p in = +20dbm rqa0009txdqs preliminary r07ds0492ej0200 rev.2.00 page 5 of 21 jun 29,...
Description Silicon N-Channel MOS FET

File Size 216.17K  /  22 Page

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    2SJ160 2SJ161 2SJ162

HITACHI[Hitachi Semiconductor]
Part No. 2SJ160 2SJ161 2SJ162
OCR Text ...mbol VDSX Ratings -120 -140 -160 15 -7 -7 100 150 -55 to +150 Unit V V A A W C C 2 2SJ160, 2SJ161, 2SJ162 Electrical Charact...Channel Dissipation Pch (W) -20 Ta = 25C -10 Drain Current ID (A) 100 ID max (Continuous) PW (-14.3 ...
Description Silicon P-Channel MOS FET

File Size 39.68K  /  8 Page

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    TOSHIBA
Part No. 2SK3440
OCR Text ... 6.5 7.5 8.5 6 7 8 10 15 200 160 120 80 40 0 0 1 2 3 4 5 v gs 5.5 v common source tc 25c, pulse test 6 6.5 8.5 15 10 7.5...channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) r t...
Description Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 218.88K  /  6 Page

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    TOSHIBA
Part No. 2SK3439
OCR Text ... test 0 0 2 6 4 40 80 120 160 common source v ds 10 v pulse test 100 25 tc 55c 1 3 5 10 30 50 100 300 3 5 10 30 50 ...channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) r t...
Description Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter Relay Drive and Motor Drive Applications

File Size 217.49K  /  6 Page

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    TOSHIBA
Part No. 2SK3389
OCR Text ...e test 5.5 5.25 5 4.75 200 160 120 80 40 0 0 2 4 6 8 10 v gs 4.5 v 6.5 10 5.5 6 8 5 common source tc 25c pulse test 0 ...channel temperature (initial) t ch (c) e as ? t ch aavalanche energy e as (mj) r ...
Description Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator, DC-DC Converter Applications Motor Drive Applications

File Size 219.06K  /  6 Page

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    TK7P50D

Toshiba Semiconductor
Part No. TK7P50D
OCR Text ...1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss 0 0.1 ? 0.2 1 10 ? 0.4 ? 0.8 ? 1.0 v gs = 0...channel tempeature (initial) t ch (c) test circuit waveform dc operation tc = 25c 150 120 90 6...
Description Switching Regulator Applications

File Size 201.40K  /  6 Page

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    Infineon Technologies
Part No. PTFA142401EL
OCR Text ...z 12 13 14 15 16 17 0 40 80 120 160 200 240 280 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency typical performance (data taken in an infineon test fixture) two-tone drive-up v dd = 30 v, i dq = 2000 ma,...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 456.56K  /  10 Page

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    TPC6104

TOSHIBA[Toshiba Semiconductor]
Part No. TPC6104
OCR Text ...06 TPC6104 RDS (ON) - Ta 160 Common source -100 IDR - VDS Common source Ta = 25C Pulse test Drain-source on resistance RDS (ON) (m) 120 VGS = -1.8 V -2.2 A ID = -1.1A -2.5 V -4.5 A IDR (A) Drain reverse current Pul...
Description From old datasheet system
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

File Size 202.45K  /  7 Page

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