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1200v 10a Datasheet PDF File

For 1200v 10a Found Datasheets File :: 471 Search Time::2ms
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				Infineon Technologies AG
Part No.	SGW25N12009 SGW25N120
OCR Text	...rn off safe operating area VCE 1200v, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 25A, VCC = 50V, RGE = 25, start at ...10a 50s 200s 1ms 60A TC=80C 40A TC=110C 20A 1A DC 0.1A Ic 0A 10Hz 100Hz 1...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	331.27K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA25N120FTD
OCR Text	1200v, 25A Field Stop Trench IGBT April 2008 FGA25N120FTD 1200v, 25A Field Stop Trench IGBT Features * Field stop trench technology...10a 8 50A 1.2 0.9 25 4 25A IC = 10a 50 75 100 125 o Collector-EmitterCase Temperature,...
Description	1200v, 25A Field Stop Trench IGBT
File Size	695.07K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW40T120 IGW40T12009
OCR Text	...tp://www.infineon.com/igbt/ VCE 1200v IC 40A VCE(sat),Tj=25C 1.7V Tj,max 150C Marking Code G40T120 Package PG-TO-247-3 G E * * * * ...10a 50s 150s 1A 500s 60A 40A Ic Ic 20A 20ms DC 0A 10Hz 100Hz 1kHz 10kHz ...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology
File Size	350.12K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW25N120R2
OCR Text	...n off safe operating area (VCE 1200v, Tj 175C) Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode su...10a 50s 40A Ic 20A 1A 500s 5ms 0A 10Hz DC 100Hz 1kHz 10kHz 100kHz 1V 10V ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	400.71K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH35UD1-EP IRG7PH35UD1PBF
OCR Text	...35UD1PbF IRG7PH35UD1-EP VCES = 1200v I NOMINAL = 20A Features * * * * * * * * * Low VCE (ON) trench IGBT Technology Low Switching Losse...10a ICE = 20A ICE = 40A 5 4 3 2 1 ICE = 10a ICE = 20A ICE = 40A 12 VGE (V) 16 20 5...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
File Size	400.08K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH35UD-EP IRG7PH35UDPBF IRG7PH35UDPBF-15
OCR Text	...DPbF IRG7PH35UD-EP C VCES = 1200v I NOMINAL = 20A G E TJ(max) = 150C Benefits * High efficiency in a wide range of application...10a ICE = 20A ICE = 40A 5 4 3 2 1 ICE = 10a ICE = 20A ICE = 40A 12 VGE (V) 16 20 5...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 50 A, 1200 V, N-CHANNEL IGBT, TO-247AD
File Size	461.38K / 11 Page	View it Online	Download Datasheet

				Rohm
Part No.	S6302
OCR Text	...duty cycle=10%, limited by tj 1200v 10a* 1 v r i f q c 3) high-speed switching possible l inner circuit 2) reduced temperature dependence a symbol l construction silicon carbide epitaxial planer type schottky diode parameter v v a a v rm...
Description	SiC Schottky Barrier Diode Bare Die
File Size	482.44K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGH25N120FTDS
OCR Text	1200v, 25A Field Stop Trench IGBT June 2009 FGH25N120FTDS 1200v, 25A Field Stop Trench IGBT Features * High speed switching * Low s...10a 1.5 IC = 10a 4 1.0 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ...
Description	1200v, 25A Field Stop Trench IGBT
File Size	702.93K / 9 Page	View it Online	Download Datasheet

For 1200v 10a Found Datasheets File :: 471 Search Time::2ms
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