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  12.8ghz Datasheet PDF File

For 12.8ghz Found Datasheets File :: 793    Search Time::1.516ms    
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    BFR360L307

Infineon Technologies AG
Part No. BFR360L307
OCR Text ...( v cb ) f = 1mhz 0 2 4 6 8 10 12 v 16 v cb 0 0.1 0.2 0.3 0.4 0.5 0.6 pf 0.8 c cb 2007-03-30 6 bfr360l3 third order intercept poi...8ghz 2.4ghz 3ghz 4ghz power gain g ma , g ms = ? ( i c ) f = 1.8ghz v ce = parameter 0 5 10 ...
Description NPN Silicon RF Transistor

File Size 75.75K  /  9 Page

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    MAXIM[Maxim Integrated Products]
Part No. MAX2645EUB MAX2645
OCR Text ...AIN = GND GAIN = VCC GAIN = GND 12 3.6 0.1 2 A V V A CONDITIONS MIN 3.0 9.2 2.7 TYP MAX 5.5 10.9 3.9 11.6 4.0 mA UNITS V 2 ___________...8GHz SiGe Low-Noise Amplifier/PA Predriver MAX2645 AC ELECTRICAL CHARACTERISTICS--LNA (Low-Noise Fi...
Description 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver

File Size 210.52K  /  12 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA2702-SM
OCR Text ...gain db 28 input return loss db 12 output return loss db 14 control gain step db 16 psat dbm 31.5 pin at 11 dbm p1db dbm 30 evm % 2.5 at 2.6...8ghz -60 -50 -40 -30 -20 -10 0 15 17 19 21 23 25 27 output power per tone (dbm) imr3 (dbc) 2.4ghz 2....
Description 2.5GHz WiMAX Driver / Power Amplifier

File Size 294.74K  /  14 Page

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ... 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V 9 8 0.7V 7 6 5 4 3 1V 0.7V 7 6 5 0.0 0.5 1.0 1.5 2.0 2.5 3....8GHz 10 0.9GHz 8 0 1V -4 -8 6 1.8GHz 4 -12 2 0 0 2 4 6 8 10 V 13 V CE -16 -20 0 1 2 3...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

File Size 56.55K  /  7 Page

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ...power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA...8GHz VCE = Parameter 14 8V dB 10V 5V dB G 18 G 10 5V 3V 16 3V 14 2V 6 12 4 10 1...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

File Size 53.54K  /  6 Page

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    CEL
Part No. UPG2181T5R
OCR Text ...pin no. pin name pin no. gnd 11 12 13 14 15 16 17 18 19 20 gnd rx gnd ant4 gnd ant3 gnd gnd ant2 pin name d n g 1 d n g 6 v 7 dd 2 t n o c v 8 1 t n o c v 9 0 t n o c v 0 1 1 t n a 2 d n g 3 x t 4 d n g 5 on path control voltage x r x t ant...
Description GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH

File Size 717.64K  /  10 Page

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    Maxim
Part No. MAX2645
OCR Text ...AIN = GND GAIN = VCC GAIN = GND 12 3.6 0.1 2 A V V A CONDITIONS MIN 3.0 9.2 2.7 TYP MAX 5.5 10.9 3.9 11.6 4.0 mA UNITS V 2 ___________...8GHz SiGe Low-Noise Amplifier/PA Predriver MAX2645 AC ELECTRICAL CHARACTERISTICS--LNA (Low-Noise Fi...
Description 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver
From old datasheet system

File Size 263.98K  /  12 Page

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    Infineon
Part No. BFP640
OCR Text ... = z lopt , f = 6 ghz g ma - 12.5 - db transducer gain i c = 30 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz i c = 30 ma,...8ghz 2.4ghz 3ghz 4ghz 5ghz 6ghz power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v ce = ...
Description Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA

File Size 271.06K  /  8 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA2703-SM
OCR Text ...oss db 10 output return loss db 12 control gain step db 13 psat dbm 31.5 pin at 11 dbm p1db dbm 30 evm % tbd at 3.5 ghz, 23 dbm pout gain va...8ghz -60 -50 -40 -30 -20 -10 0 15 17 19 21 23 25 27 output power per tone (dbm) imr3 (dbc) 3.35ghz 3...
Description 3.5GHz WiMAX Driver / Power Amplifier

File Size 294.80K  /  14 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. CLY15 Q62702-L99
OCR Text ... VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 5 150 -55...+150 4.7 Unit V V V A C C W Thermal resistance Channel-soldering point (GND) RthC...8GHz Pinch-off Voltage VDS=3V ID=400A Small Signal Gain *) VDS = 3V Pin = 5dBm ID = 1.4A...
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system

File Size 59.12K  /  7 Page

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For 12.8ghz Found Datasheets File :: 793    Search Time::1.516ms    
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