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SamHop
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| Part No. |
SP2013
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| OCR Text |
... parameter -20 -8.5 -49 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r d...ohm v gs =-4.5v , i d =-4.25a r ds(on) drain-source on-state resistance i dss ua gate threshold vol... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.64K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
STA6968
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| OCR Text |
...25 c t a=70 c 2 4.5 a limit nov 12.2006 p dip -8 e s d p rotected.
p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t...ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =48... |
| Description |
S uper high dense cell design for low R DS (ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
114.71K /
6 Page |
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PDI
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| Part No. |
PEM01Q-1-AC1 PEM02Q-1-AC1 PEM02Q-1M-AC1
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| OCR Text |
... 1.6 1.0 0.9 0.5 330k 0.47 4700 12 r cx 1, 2, 3 l1, 2 (ohms) (uf) (mh x 2) 3.7 2.4 1.8 0.9 0.7 2.2m 0.1 0.3 1.7 1.6 1.0 0.9 0.5 330k 0.47 1...ohm circuit) insertion loss in db (50 ohm circuit) schematic 1m; case c1, c2 comm. mode(l-g) mhz ... |
| Description |
MULTI-STAGE EMI/RFI LINE FILTER
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| File Size |
262.35K /
6 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STT3418
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| OCR Text |
...anche energy d t a =70 c w a a 12 5 20 3 green product 4 1.9 g d s 42 c/w thermal characteristics thermal resistance, junction-to-ambie...ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
130.74K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT3414
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| OCR Text |
12 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) @ vgs=4.5v 33 @ vgs=10v features super high dense c...ohm v gs =10v , i d =3.5a v ds =5v,i d =3.5a input capacitance output capacitance dynamic characteri... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
116.16K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT04N20
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| OCR Text |
... c iss 385 pf c oss 21 pf c rss 12 pf q g 8.3 nc 10 20 4.5 t d(on) 5.7 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =100v i d =0.5a v gs =10v r gen = 6 ohm total gate charge rise time turn-off dela... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
123.46K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STT03L06
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| OCR Text |
...anche energy d t a =70 c w a a 12 3 20 3 green product 2.4 1.9 g d s t a =25 c g s stt sris sot - 223 thermal characteristics 42 c/w...ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
133.05K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT02N10
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| OCR Text |
...4 pf c rss 14 pf q g 6.8 nc 9.4 12.7 2 t d(on) 3.3 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.77K /
8 Page |
View
it Online |
Download Datasheet |
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