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Samsung semiconductor
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| Part No. |
K7I321884C K7I323684C
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| OCR Text |
...,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block w... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
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| File Size |
414.96K /
18 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7Q163654A K7Q163654A-FC10 K7Q163654A-FC13 K7Q163654A-FC16 K7Q161854A-FC10
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| OCR Text |
...-7N,4P,5P,7P,8P,3R-5R,7R-9R 10P,11n,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,3L,3M,2N 11P,10M,11L,11K,10J,11F,11E,10C,11B,2B,3D,3E, 2F,3G,3K,2L,3N,3P 4A 8A 7B, 5A 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,... |
| Description |
1M X 18 QDR SRAM, 3 ns, PBGA165
512Kx36-bit, 1Mx18-bit QDR SRAM
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| File Size |
508.59K /
17 Page |
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Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB22M36-300M3 IS61DDB22M36-300M3L IS61DDB22M36-300M3LI IS61DDB22M36 IS61DDB24M18-250M3 IS61DDB24M18-250M3L IS61DDB24M18-300M3 IS61DDB24M18-300M3L
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| OCR Text |
...K, 11J, 11F, 11E, 11C, 11B 10P, 11n, 10M, 10K, 10J, 11G, 10E, 11D, 10C 3B, 3D, 3E, 3F, 3G, 3K, 3L, 3N, 3P 2B, 3C, 2D, 2F, 2G, 3J, 2L, 3M, 2N 11P, 10M, 11L, 11K, 10J, 11F, 11E, 10C, 11B 2B, 3D, 3E, 2F, 3G, 3K, 2L, 3N, 3P 4A 8A
2M x 36 DQ ... |
| Description |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
2M X 36 DDR SRAM, 0.35 ns, PBGA165
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| File Size |
585.65K /
25 Page |
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Download Datasheet |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61DDB42M36-250M3 IS61DDB42M36-250M3L IS61DDB42M36-300M3 IS61DDB42M36-300M3L IS61DDB44M18-250M3 IS61DDB44M18-250M3L IS61DDB44M18-300M3 IS61DDB44M18-300M3L
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| OCR Text |
...K, 11J, 11F, 11E, 11C, 11B 10P, 11n, 10M, 10K, 10J, 11G, 10E, 11D, 10C 3B, 3D, 3E, 3F, 3G, 3K, 3L, 3N, 3P 2B, 3C, 2D, 2F, 2G, 3J, 2L, 3M, 2N 11P, 10M, 11L, 11K, 10J, 11F, 11E, 10C, 11B 2B, 3D, 3E, 2F, 3G, 3K, 2L, 3N, 3P 4A 8A Input clock. I... |
| Description |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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| File Size |
614.82K /
26 Page |
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Download Datasheet |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDB22M36-250M3 IS61QDB22M36-250M3L IS61QDB22M36-200M3L IS61QDB22M36-300M3 IS61QDB22M36-300M3L IS61QDB24M18-200M3L IS61QDB24M18-300M3 IS61QDB24M18-250M3L IS61QDB24M18-300M3L
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| OCR Text |
... 8P, 3R 4R, 5R, 7R, 8R, 9R 10P, 11n, 11M, 10K, 11J, 11G, 10E, 11D, 11C 10N, 9M, 9L, 9J, 10G, 9F, 10D, 9C, 9B 3B, 3C, 2D, 3F, 2G, 3J, 3L, 3M, 2N 1C, 1D, 2E, 1G, 1J, 2K, 1M, 1N, 2P 11P, 10M, 11L, 11K, 10J, 11F, 11E, 10C, 11B 9P, 9N, 10L, 9K, ... |
| Description |
72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 2) Synchronous SRAMs
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| File Size |
636.00K /
27 Page |
View
it Online |
Download Datasheet |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDB42M36-250M3 IS61QDB42M36-300M3 IS61QDB44M18-250M3L IS61QDB44M18-300M3 IS61QDB44M18-300M3I
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| OCR Text |
...ess inputs. 5R, 7R, 8R, 9R 10P, 11n, 11M, 10K, 11J, 11G, 10E, 11D, 11C 10N, 9M, 9L, 9J, 10G, 9F, 10D, 9C, 9B 3B, 3C, 2D, 3F, 2G, 3J, 3L, 3M, 2N 1C, 1D, 2E, 1G, 1J, 2K, 1M, 1N, 2P 11P, 10M, 11L, 11K, 10J, 11F, 11E, 10C, 11B 9P, 9N, 10L, 9K, ... |
| Description |
72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 4) Synchronous SRAMs
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| File Size |
654.22K /
28 Page |
View
it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K7I161882B
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| OCR Text |
...,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block w... |
| Description |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
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| File Size |
403.88K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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