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  11 u Datasheet PDF File

For 11 u Found Datasheets File :: 85803    Search Time::2.047ms    
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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents op...u.T. + I D , Drain Current (A) -VDD 60 VGS Pulse Width 1 s Duty Factor 0.1 % 40 ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...V/C Reference to 25C, ID = 1mA 11 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 ...u.T. + I D , Drain Current (A) -VDD 60 VGS Pulse Width 1 s Duty Factor 0.1 % 40 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... V/C Reference to 25C, ID = 1mA 11 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 ...u.T. + I D , Drain Current (A) -VDD 60 VGS Pulse Width 1 s Duty Factor 0.1 % 40 ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...n-to-Ambient Typ. Max. 1.11 --- 62 40 units C/W i i --- 0.50 --- --- Junction-to-Ambient (PCB Mount) j www.irf....u.T IAS tp + V - DD 150 A 0.01 100 Fig 12a. unclamped Inductive Test Circuit V(B...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AuTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...srew Max. 100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) units A W W/C V mJ A mJ V/ns...u.T. + I D , Drain Current (A) RG -VDD 60 10V Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1302S/IRF1302L 700 15V TOP ID 43A 74A 104A RG 20V D.u.T IAS tp EAS , Single Pulse Avalanche Ene...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1302 700 15V TOP ID 43A 74A 104A RG 20V D.u.T IAS tp EAS , Single Pulse Avalanche Energy (mJ) ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... --- --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 11 56 45 40 7.5 1900 450 230 Max. units Conditions --- V VGS = 0V...u.T. + I D , Drain Current (A) -V DD 30 10V Pulse Width 1 s Duty Factor 0.1 % 20 ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...- --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 11 56 45 40 4.5 7.5 1900 450 230 Max. units Conditions --- V V...u.T. + RG I D , Drain Current (A) -VDD 30 10V Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...unction temperature. ( See fig. 11 ) ISD 25A, di/dt 170A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. VDD = 25V, start...u L S E W ID TH 8 9 10 0.0 -6 0 -4 0 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 V G ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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