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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-100BS
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| OCR Text |
...urce on-state resistance v gs =10v; i d =15a; t j = 100 c; see figure 12 --12m ? v gs =10v; i d =15a; t j =25c; see figure 13 -5.46.8m ...ms 10 ms 1 ms 100 s t p = 10 s
psmn7r0-100bs all information provided in this document is sub... |
| Description |
N-channel 100V 6.8 m? standard level MOSFET in D2PAK.
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| File Size |
197.75K /
14 Page |
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eupec GmbH
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| Part No. |
BSM20GP60
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| OCR Text |
...mWs mWs
- diF/dt =
VGE = -10v, Tvj = 25C, V R = VGE = -10v, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10v, Tvj = 25C, V R = VGE = -10v, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10v, Tvj = 25C, V R = VGE = -10v, Tvj = 125C, V ... |
| Description |
IGBT-Modules
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| File Size |
158.08K /
12 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
FQPF3N60
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| OCR Text |
...4 6 8 10 12 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] figure 5. ...ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = ... |
| Description |
600V N-Channel MOSFET
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| File Size |
728.67K /
7 Page |
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Price and Availability
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