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SDA2060 IT7001N M5201FP D4KB07 D2621 ON0595 STK4833 PR510
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  10.45a Datasheet PDF File

For 10.45a Found Datasheets File :: 1796    Search Time::1.406ms    
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    Matsshita / Panasonic
Part No. 2SK3047
OCR Text ...of safe operation (ASO) 100 30 10 t =10s 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 100s 1ms DC 10ms 100ms 60 2SK3047 PD Ta 30 EAS Tj Avalanche energy capacity EAS (mJ) VDD=50V ID=2A 25 Allowable power dissipation PD (W) ...
Description Power F-MOS FETs

File Size 52.56K  /  4 Page

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    IRF054 IRF054-15

http://
International Rectifier, Corp.
Part No. IRF054 IRF054-15
OCR Text ...g Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. S...45A, ISD 45A, di/dt 200A/s, VDD 60V, TJ 150C Suggested RG =2.35 Pulse width 300 s; Duty...
Description 60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 60V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 重复性雪崩和DV /受好评的HEXFET三极管通孔(TO-204AA/AE DT)的
Repetitive Avalanche Ratings

File Size 145.01K  /  7 Page

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    MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX3202E MAX3202EEB MAX3202EET MAX3203 MAX3203EEB MAX3203EET MAX3204EEB MAX3204EET MAX3206E MAX3204E MAX3203EEBT-T MAX3204EEBT-T MAX3206EEBL-T MAX3203EETT MAX3204EETT MAX3206EETC
OCR Text ... 1.50 1.30 CLAMP VOLTAGE (V) 1.10 0.90 0.70 0.50 0.30 30 50 70 90 110 130 1000 LEAKAGE CURRENT PER CHANNEL 12 100 INPUT CAPA...45A in 1ns (di/dt = 45 x 109). An inductance of only 10nH adds an additional 450V to the clamp volta...
Description Low-Capacitance 2/3/4/6-Channel 15kV ESD Protection Arrays for High-Speed Data Interfaces
"Six-channel, 5pF, ?5kV ESD Protection Diodes"
"Quad, 5pF, ?5kV ESD Protection Diodes"
"Dual, 5pF, ?5kV ESD Protection Diodes"
Low-Capacitance / 2/3/4/6-Channel / 15kV ESD Protection Arrays for High-Speed Data Interfaces
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD-Protection Arrays for High-Speed Data Interfaces

File Size 368.02K  /  15 Page

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    FX30KMJ-3

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX30KMJ-3
OCR Text ... FX30KMJ-3 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0....45A -30A 80 -10V -2 -15A 40 0 0 -2 -4 -6 -8 -10 00 -10 -2 -3...
Description HIGH-SPEED SWITCHING USE

File Size 49.50K  /  4 Page

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    PSMN025-100D PSMN025-100D_2

NXP Semiconductors
Philips Semiconductors
Part No. PSMN025-100D PSMN025-100D_2
OCR Text ...C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 100 100 20 47 33 188 150 175 UNIT V V V A...45A Tj = 25 C VDD = 20 V 100 25 C VDD = 80 V 10 Tj prior to avalanche = 150 C 5 ...
Description    N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS(tm) transistor

File Size 94.74K  /  9 Page

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    TVSF0603

Microsemi Corporation
Part No. TVSF0603
OCR Text ...G, -65C to 125C, 30 min. cycle, 10 cycles * Vibration: MIL-STD-202F, Method 201A,(10 to 55 to 10 Hz, 1 min. cycle, 2 hrs each in X-Y-Z) * Ch...45A with voltage levels of 15 kV. Contact discharge is the recommended method of test because of its...
Description FemtoFarad Polymer ESD Suppressor

File Size 823.31K  /  7 Page

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